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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover) Loot Price: R2,651
Discovery Miles 26 510
CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover): Alexander A. Demkov,...

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover)

Alexander A. Demkov, Bill Taylor, H. Rusty Harris, Jeffery W. Butterbaugh, Willy Rachmady

Series: MRS Proceedings

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Loot Price R2,651 Discovery Miles 26 510 | Repayment Terms: R248 pm x 12*

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To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

General

Imprint: Materials Research Society
Country of origin: United States
Series: MRS Proceedings
Release date: November 2009
First published: November 2009
Editors: Alexander A. Demkov • Bill Taylor • H. Rusty Harris • Jeffery W. Butterbaugh • Willy Rachmady
Dimensions: 236 x 160 x 14mm (L x W x T)
Format: Hardcover
Pages: 194
ISBN-13: 978-1-60511-128-5
Categories: Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
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LSN: 1-60511-128-7
Barcode: 9781605111285

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