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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover)
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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover)
Series: MRS Proceedings
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To address the increasing demands of device scaling, new materials
are being introduced into conventional Si CMOS processing at an
unprecedented rate. Presentations collected here focus on
understanding, from a chemistry and materials perspective, the
mechanism of interface formation and defects at interfaces, for
both conventional Si and alternative channel (Ge or III-V) systems.
Several papers address reliability concerns for high-k/metal gate
(basic physical models, charge trapping, etc.), while others cover
characterization of the thin films and interfaces which comprise
the gate stack. Topics include: advanced Si-based gate stacks; and
alternate channel materials.
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