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Books > Professional & Technical > Mechanical engineering & materials > Materials science

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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover) Loot Price: R2,815

Discovery Miles 28 150

Repayment Terms: R264 pm x 12*

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CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover): Alexander A. Demkov,...

CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover)

Alexander A. Demkov, Bill Taylor, H. Rusty Harris, Jeffery W. Butterbaugh, Willy Rachmady

Series: MRS Proceedings

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Loot Price R2,815 Discovery Miles 28 150 | Repayment Terms: R264 pm x 12*

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To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

General

Imprint:	Materials Research Society
Country of origin:	United States
Series:	MRS Proceedings
Release date:	November 2009
First published:	November 2009
Editors:	Alexander A. Demkov • Bill Taylor • H. Rusty Harris • Jeffery W. Butterbaugh • Willy Rachmady
Dimensions:	236 x 160 x 14mm (L x W x T)
Format:	Hardcover
Pages:	194
ISBN-13:	978-1-60511-128-5
Categories:	Books > Professional & Technical > Mechanical engineering & materials > Materials science > General Promotions
LSN:	1-60511-128-7
Barcode:	9781605111285