CMOS Gate-Stack Scaling - Materials, Interfaces and Reliability Implications: Volume 1155 (Hardcover)

To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.

General

Imprint:	Materials Research Society
Country of origin:	United States
Series:	MRS Proceedings
Release date:	November 2009
First published:	November 2009
Editors:	Alexander A. Demkov • Bill Taylor • H. Rusty Harris • Jeffery W. Butterbaugh • Willy Rachmady
Dimensions:	236 x 160 x 14mm (L x W x T)
Format:	Hardcover
Pages:	194
ISBN-13:	978-1-60511-128-5
Categories:	Books > Professional & Technical > Mechanical engineering & materials > Materials science > General
LSN:	1-60511-128-7
Barcode:	9781605111285

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