Power semiconductor devices are widely used for the control and
management of electrical energy. The improving performance of power
devices has enabled cost reductions and efficiency increases
resulting in lower fossil fuel usage and less environmental
pollution. This book provides the first cohesive treatment of the
physics and design of silicon carbide power devices with an
emphasis on unipolar structures. It uses the results of extensive
numerical simulations to elucidate the operating principles of
these important devices.
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