Optical Absorption of Impurities and Defects in Semiconducting Crystals - Electronic Absorption of Deep Centres and Vibrational Spectra (Hardcover, 2012)

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Springer Series in Solid-State Sciences, 169
Release date:	August 2012
First published:	2013
Authors:	Bernard Pajot • Bernard Clerjaud
Dimensions:	235 x 155 x 33mm (L x W x T)
Format:	Hardcover
Pages:	512
Edition:	2012
ISBN-13:	978-3-642-18017-0
Categories:	Books > Science & Mathematics > Chemistry > Analytical chemistry > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Microwave technology Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Applied optics > General
LSN:	3-642-18017-5
Barcode:	9783642180170

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