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Books > Professional & Technical > Energy technology & engineering > Electrical engineering
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Strain-Engineered MOSFETs (Paperback)
Loot Price: R1,614
Discovery Miles 16 140
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Strain-Engineered MOSFETs (Paperback)
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Currently strain engineering is the main technique used to enhance
the performance of advanced silicon-based metal-oxide-semiconductor
field-effect transistors (MOSFETs). Written from an engineering
application standpoint, Strain-Engineered MOSFETs introduces
promising strain techniques to fabricate strain-engineered MOSFETs
and to methods to assess the applications of these techniques. The
book provides the background and physical insight needed to
understand new and future developments in the modeling and design
of n- and p-MOSFETs at nanoscale. This book focuses on recent
developments in strain-engineered MOSFETS implemented in
high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin
germanium-on-insulator platforms, combined with high-k insulators
and metal-gate. It covers the materials aspects, principles, and
design of advanced devices, fabrication, and applications. It also
presents a full technology computer aided design (TCAD) methodology
for strain-engineering in Si-CMOS technology involving data flow
from process simulation to process variability simulation via
device simulation and generation of SPICE process compact models
for manufacturing for yield optimization. Microelectronics
fabrication is facing serious challenges due to the introduction of
new materials in manufacturing and fundamental limitations of
nanoscale devices that result in increasing unpredictability in the
characteristics of the devices. The down scaling of CMOS
technologies has brought about the increased variability of key
parameters affecting the performance of integrated circuits. This
book provides a single text that combines coverage of the
strain-engineered MOSFETS and their modeling using TCAD, making it
a tool for process technology development and the design of
strain-engineered MOSFETs.
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