This book provides a comprehensive review of the state-of-the-art
in the development of new and innovative materials, and of advanced
modeling and characterization methods for nanoscale CMOS devices.
Leading global industry bodies including the International
Technology Roadmap for Semiconductors (ITRS) have created a
forecast of performance improvements that will be delivered in the
foreseeable future - in the form of a roadmap that will lead to a
substantial enlargement in the number of materials, technologies
and device architectures used in CMOS devices. This book addresses
the field of materials development, which has been the subject of a
major research drive aimed at finding new ways to enhance the
performance of semiconductor technologies. It covers three areas
that will each have a dramatic impact on the development of future
CMOS devices: global and local strained and alternative materials
for high speed channels on bulk substrate and insulator; very low
access resistance; and various high dielectric constant gate stacks
for power scaling.
The book also provides information on the most appropriate
modeling and simulation methods for electrical properties of
advanced MOSFETs, including ballistic transport, gate leakage,
atomistic simulation, and compact models for single and multi-gate
devices, nanowire and carbon-based FETs. Finally, the book presents
an in-depth investigation of the main nanocharacterization
techniques that can be used for an accurate determination of
transport parameters, interface defects, channel strain as well as
RF properties, including capacitance-conductance, improved split
C-V, magnetoresistance, charge pumping, low frequency noise, and
Raman spectroscopy.
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