Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors (Hardcover)

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

General

Imprint:	Cambridge UniversityPress
Country of origin:	United Kingdom
Release date:	February 2018
Authors:	Farzan Jazaeri • Jean-Michel Sallese
Dimensions:	254 x 178 x 15mm (L x W x T)
Format:	Hardcover
Pages:	252
ISBN-13:	978-1-107-16204-4
Categories:	Books > Professional & Technical > Technology: general issues > Nanotechnology Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
LSN:	1-107-16204-1
Barcode:	9781107162044

Is the information for this product incomplete, wrong or inappropriate? Let us know about it.

Does this product have an incorrect or missing image? Send us a new image.

Is this product missing categories? Add more categories.

Review This Product

No reviews yet - be the first to create one!