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Nonvolatile Memory Design - Magnetic, Resistive, and Phase Change (Paperback) Loot Price: R3,262

Discovery Miles 32 620

Repayment Terms: R306 pm x 12*

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Nonvolatile Memory Design - Magnetic, Resistive, and Phase Change (Paperback): Hai Li, Yiran Chen

Nonvolatile Memory Design - Magnetic, Resistive, and Phase Change (Paperback)

Hai Li, Yiran Chen

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Loot Price R3,262 Discovery Miles 32 620 | Repayment Terms: R306 pm x 12*

Expected to ship within 12 - 19 working days

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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

General

Imprint:	Crc Press
Country of origin:	United Kingdom
Release date:	March 2017
First published:	2012
Authors:	Hai Li • Yiran Chen
Dimensions:	234 x 156mm (L x W)
Format:	Paperback
Pages:	203
ISBN-13:	978-1-138-07663-1
Categories:	Books > Professional & Technical > Environmental engineering & technology > General Books > Computing & IT > General theory of computing > General Books > Computing & IT > Applications of computing > General Books > Professional & Technical > Energy technology & engineering > Electrical engineering > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Circuits & components Promotions
LSN:	1-138-07663-5
Barcode:	9781138076631