Chemical Beam Epitaxy & Related Techniques (Hardcover)

Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview of the state-of-the-art in this area of semiconductor technology. Topics covered include equipment design and safety considerations, design of chemical precursors, surface chemistry and growth mechanisms, materials and devices from arsenide, phosphide, antimonide, silicon and II-VI compounds, doping, selected area epitaxy and etching. The volume provides an introduction for those new to the field and a detailed summary for experienced researchers.

General

Imprint:	John Wiley & Sons
Country of origin:	United States
Release date:	June 1997
First published:	December 1997
Authors:	J.S. Foord
Dimensions:	242 x 160 x 32mm (L x W x T)
Format:	Hardcover
Pages:	460
ISBN-13:	978-0-471-96748-4
Categories:	Books > Science & Mathematics > Physics > States of matter > Condensed matter physics (liquids & solids) Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
LSN:	0-471-96748-3
Barcode:	9780471967484

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