Ferroelectric Memories (Hardcover, 2000 ed.)

Ferroelectric memories have changed in 10 short years from academic curiosities of the university research labs to commercial devices in large-scale production. This is the first text on ferroelectric memories that is not just an edited collection of papers by different authors. Intended for applied physicists, electrical engineers, materials scientists and ceramists, it includes ferroelectric fundamentals, especially for thin films, circuit diagrams and processsing chapters, but emphazises device physics. Breakdown mechanisms, switching kinetics and leakage current mechanisms have lengthly chapters devoted to them. The book will be welcomed by research scientists in industry and government laboratories and in universities. It also contains 76 problems for students, making it particularly useful as a textbook for fourth-year undergraduate or first-year graduate students.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Series:	Springer Series in Advanced Microelectronics, 3
Release date:	May 2000
First published:	2000
Authors:	James F. Scott
Dimensions:	235 x 155 x 15mm (L x W x T)
Format:	Hardcover
Pages:	248
Edition:	2000 ed.
ISBN-13:	978-3-540-66387-4
Categories:	Books > Computing & IT > Computer hardware & operating systems > Storage media & peripherals Books > Science & Mathematics > Physics > Applied physics & special topics > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General Promotions
LSN:	3-540-66387-8
Barcode:	9783540663874

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