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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect (Hardcover, 1st ed. 2018) Loot Price: R3,290
Discovery Miles 32 900
Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect (Hardcover, 1st ed....

Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect (Hardcover, 1st ed. 2018)

Jie Cheng

Series: Springer Theses

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Loot Price R3,290 Discovery Miles 32 900 | Repayment Terms: R308 pm x 12*

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This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material. Pursuing a systematic approach to resolve the remaining critical issues in the CMP, it first investigates the tribocorrosion properties and the material removal mechanisms of copper (Cu) and Ru in KIO4-based slurry. The thesis subsequently studies Cu/Ru galvanic corrosion from a new micro and in-situ perspective, and on this basis, seeks ways to mitigate corrosion using different slurry additives. The findings presented here constitute a significant advance in fundamental and technical investigations into the CMP, while also laying the groundwork for future research.

General

Imprint: Springer Verlag, Singapore
Country of origin: Singapore
Series: Springer Theses
Release date: September 2017
First published: 2018
Authors: Jie Cheng
Dimensions: 235 x 155mm (L x W)
Format: Hardcover
Pages: 137
Edition: 1st ed. 2018
ISBN-13: 978-981-10-6164-6
Categories: Books > Professional & Technical > Mechanical engineering & materials > Mechanical engineering > Tribology (friction & lubrication)
Books > Professional & Technical > Mechanical engineering & materials > Production engineering > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > General
LSN: 981-10-6164-5
Barcode: 9789811061646

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