This thesis addresses selected unsolved problems in the chemical
mechanical polishing process (CMP) for integrated circuits using
ruthenium (Ru) as a novel barrier layer material. Pursuing a
systematic approach to resolve the remaining critical issues in the
CMP, it first investigates the tribocorrosion properties and the
material removal mechanisms of copper (Cu) and Ru in KIO4-based
slurry. The thesis subsequently studies Cu/Ru galvanic corrosion
from a new micro and in-situ perspective, and on this basis, seeks
ways to mitigate corrosion using different slurry additives. The
findings presented here constitute a significant advance in
fundamental and technical investigations into the CMP, while also
laying the groundwork for future research.
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