Plasma Charging Damage (Hardcover, 2001 ed.)

This book provides an in-depth, comprehensive and up-to-date coverage of the subject of plasma charging damage in modern VLSI circuit manufacturing. It is written for beginners as well as practitioners. For beginners, this book presents an easy-to-follow, unified explanation of various charging-damage phenomena, the goal being to provide them with a solid foundation for taking on real damage problems encountered in VLSI manufacturing. For practitioners, it can help bridge the gap between disciplines by providing all of the necessary background materials in one place.Drawing on the author's wide range of experience in plasma science, processing technologies, device physics and reliability physics, the text includes information on: - plasma and mechanisms of plasma damage;- wear-out and breakdown of thin gate-oxides;- the impact of processing equipment on damage;- methods of damage measurement;- damage management; - gate-oxide scaling.

General

Imprint:	Springer London
Country of origin:	United Kingdom
Release date:	October 2000
First published:	2001
Authors:	Kin P. Cheung
Dimensions:	235 x 155 x 20mm (L x W x T)
Format:	Hardcover
Pages:	346
Edition:	2001 ed.
ISBN-13:	978-1-85233-144-3
Categories:	Books > Professional & Technical > Industrial chemistry & manufacturing technologies > General Books > Professional & Technical > Mechanical engineering & materials > Mechanical engineering > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
LSN:	1-85233-144-5
Barcode:	9781852331443

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