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Study of Defect States in Silicon Carbide (Paperback)
Loot Price: R1,881
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Study of Defect States in Silicon Carbide (Paperback)
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Current power electronics world require semiconductor devices which
are capable of highly reliable performances under extreme
conditions of voltages and temperature. Wide band gap
semiconductors are more suitable in comparison to the traditional
semiconductors in such cases. One such semiconductor currently in
focus is SiC. This book describes the strucutral, electronic and
magnetic properties of SiC. It presents the results of coputational
studies of few intrinsic and extrinsic impurities in SiC and their
combination too. Many conclusions are found which can throw some
light on its practical usefulness. The impurities considered are,
B, Al, Ga, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn and W. We have
used first principle density functional theory with different
exchange and correlation schemes using pseudopotentials to perform
the electronic structure calculations of several defects in SiC.
The theoretical background for computation has also been described
in this book.
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