This work has been motivated by the outstanding need to prepare
suitable substrate for growth of III-nitride heteroepitaxial thin
films. The issue of lattice and thermal expansion mismatches
between the substrates and overlayers, which results in a high
threading dislocation density in the films, is seen to be
detrimental to photon and carrier transport in these systems. Thus,
looking for appropriate substrates or modifying substrates
appropriately, has attracted enormous attentions. The work includes
the chemical and structural modifications of silicon, gallium
arsenide and sapphire substrates, to obtain appropriate
characteristics. The work also consists of a significant portion on
the adsorption and desorption characteristic of Ga metal on various
high and low index silicon surfaces. This study not only
complements the search for substrate for GaN growth, but also in
other interesting aspects of initial stages of metal/semiconductor
interface formation, evolution of superstructural 2D- surface
phases and formation of sub-nanodimension metal nanostructures and
delta doped.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!
Welcome to Loot.co.za!
Sign in / Register |Wishlists & Gift Vouchers |Help | Advanced search
(1)
