This work provides a comprehensive discussion of the bias
dependence of equivalent circuit parameters for the three devices
and an extensive discussion of temperature dependence. It: covers
recess-etched MESFETs and self-aligned MESFETs with and without
lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP
lattice-matched HEMT equivalent circuits; and describes a
large-signal, temperature-dependent model extractor for A1GaAs-GaAs
HBTs. The book is intended for circuit designers, process and
device developers and test engineers.
General
Is the information for this product incomplete, wrong or inappropriate?
Let us know about it.
Does this product have an incorrect or missing image?
Send us a new image.
Is this product missing categories?
Add more categories.
Review This Product
No reviews yet - be the first to create one!
Welcome to Loot.co.za!
Sign in / Register |Wishlists & Gift Vouchers |Help | Advanced search
