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Neutron Transmutation Doping of Semiconductor Materials (Paperback, 1984 ed.) Loot Price: R1,604
Discovery Miles 16 040
Neutron Transmutation Doping of Semiconductor Materials (Paperback, 1984 ed.): Robert D Larrabee

Neutron Transmutation Doping of Semiconductor Materials (Paperback, 1984 ed.)

Robert D Larrabee

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Loot Price R1,604 Discovery Miles 16 040 | Repayment Terms: R150 pm x 12*

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viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity."

General

Imprint: Springer-Verlag New York
Country of origin: United States
Release date: 2012
First published: 1984
Authors: Robert D Larrabee
Dimensions: 254 x 178 x 19mm (L x W x T)
Format: Paperback
Pages: 338
Edition: 1984 ed.
ISBN-13: 978-1-4612-9675-1
Categories: Books > Professional & Technical > Energy technology & engineering > Electrical engineering > General
Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > Semi-conductors & super-conductors
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LSN: 1-4612-9675-7
Barcode: 9781461296751

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