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Silicon Nanoelectronics (Paperback)
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Silicon Nanoelectronics (Paperback)
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Technological advancement in chip development, primarily based on
the downscaling of the feature size of transistors, is threatening
to come to a standstill as we approach the limits of conventional
scaling. For example, when the number of electrons in a device's
active region is reduced to less than ten electrons (or holes),
quantum fluctuation errors will occur, and when gate insulator
thickness becomes too insignificant to block quantum mechanical
tunneling, unacceptable leakage will occur. Fortunately, there is
truth in the old adage that whenever a door closes, a window opens
somewhere else. In this case, that window opening is
nanotechnology. Silicon Nanoelectronics takes a look at at the
recent development of novel devices and materials that hold great
promise for the creation of still smaller and more powerful chips.
Silicon nanodevices are positoned to be particularly relevant in
consideration of the existing silicon process infrastructure
already in place throughout the semiconductor industry and
silicon's consequent compatibility with current CMOS circuits. This
is reinforced by the nearly perfect interface that can exist
between natural oxide and silicon. Presenting the contributions of
more than 20 leading academic and corporate researchers from the
United States and Japan, Silicon Nanoelectronics offers a
comprehensive look at this emergent technology. The text includes
extensive background information on the physics of silicon
nanodevices and practical CMOS scaling. It considers such issues as
quantum effects and ballistic transport and resonant tunneling in
silicon nanotechnology. A significant amount of attention is given
to the all-important silicon single electron transistors and the
devices that utilize them. In offering an update of the current
state-of-the-art in the field of silicon nanoelectronics, this
volume serves well as a concise reference for students, scientists,
engineers, and specialists in various fields, in
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