It is estimated that the scaling of conventional silicon MOSFETs
will end around the year 2020. While this certainly does not
preclude the use of silicon in future devices, it does require new
thoughts on the types of practical devices that can be used in
integrated circuits. Namely, those that reduce power and work at
least partly on the principles of quantum mechanics (such as
spintronic or tunneling devices) will tend to be favored. The
research presented herein is based on the fabrication and transport
properties of nanometer-scale devices in silicon. The most
promising of these structures are nanowires fabricated with a
scanning tunneling microscope (STM). These high-density nanowires
display the low-temperature phenomena of weak localization and
one-dimensional conduction. Long-term applications of such
nanowires and derivative devices include alternatives to
conventional CMOS transistors and very sensitive charge and/or
spin-detection devices. In addition, focused ion beams (FIBs) have
been used to directly and precisely implant ions in the hope that
they may be used to contact nanodevices, but surface damage may
preclude that possibility.
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