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Ferroelectricity in Doped Hafnium Oxide - Materials, Properties and Devices (Paperback)
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Ferroelectricity in Doped Hafnium Oxide - Materials, Properties and Devices (Paperback)
Series: Woodhead Publishing Series in Electronic and Optical Materials
Expected to ship within 12 - 17 working days
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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and
Devices covers all aspects relating to the structural and
electrical properties of HfO2 and its implementation into
semiconductor devices, including a comparison to standard
ferroelectric materials. The ferroelectric and field-induced
ferroelectric properties of HfO2-based films are considered
promising for various applications, including non-volatile
memories, negative capacitance field-effect-transistors, energy
storage, harvesting, and solid-state cooling. Fundamentals of
ferroelectric and piezoelectric properties, HfO2 processes, and the
impact of dopants on ferroelectric properties are also extensively
discussed in the book, along with phase transition, switching
kinetics, epitaxial growth, thickness scaling, and more. Additional
chapters consider the modeling of ferroelectric phase
transformation, structural characterization, and the differences
and similarities between HFO2 and standard ferroelectric materials.
Finally, HfO2 based devices are summarized.
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