Moore's law suggests that the number of transistors which can be
economically fabricated on a chip exponentially increases with
time, traditionally this has been done by simple scaling of the
channel within metal oxide semiconductor field effect transistors
(MOSFETs). However, this approach is fast reaching fundamental
limitations, which necessitates the substitution of different
materials in traditional silicon devices to enhance their
performance. A high composition (x>0.75) Si1-xGex alloy layer
can be used as a buffer layer for such materials. However, buffers
normally consist of a trade-off between structural quality factors
and the physical attributes of any active channel layer are
directly affected by those of the buffer which must not compromise
device performance. In this work, a good quality high Ge
composition SiGe buffer is investigated and is compared to more
popular buffer fabrication techniques. All aspects from epitaxial
growth to structural characterisation are explained from basic
principles and should be useful for anyone in the semiconductor
industry to gain a grasp of structural analysis which is typical
for this field of research.
General
Imprint: |
Lap Lambert Academic Publishing
|
Country of origin: |
Germany |
Release date: |
June 2010 |
First published: |
June 2010 |
Authors: |
Vishal Ajit Shah
|
Dimensions: |
229 x 152 x 12mm (L x W x T) |
Format: |
Paperback - Trade
|
Pages: |
216 |
ISBN-13: |
978-3-8383-6313-4 |
Categories: |
Books >
Science & Mathematics >
Physics >
General
|
LSN: |
3-8383-6313-2 |
Barcode: |
9783838363134 |
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