The emergence of highly efficient short-wavelength laser diodes
based on the III-V compound semiconductor GaN has not only enabled
high-density optical data storage, but is also expected to
revolutionize display applications. Moreover, a variety of
scientific applications in biophotonics, materials research and
quantum optics can benefit from these versatile and cost-efficient
laser light sources in the near-UV to green spectral range. This
thesis describes the device physics of GaN-based laser diodes,
together with recent efforts to achieve longer emission wavelengths
and short-pulse emission. Experimental and theoretical approaches
are employed to address the individual device properties and
optimize the laser diodes toward the requirements of specific
applications.
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