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Hf-Based High-k Dielectrics - Process Development, Performance Characterization, and Reliability (Paperback)
Loot Price: R869
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Hf-Based High-k Dielectrics - Process Development, Performance Characterization, and Reliability (Paperback)
Series: Synthesis Lectures on Solid State Materials and Devices
Expected to ship within 10 - 15 working days
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In this work, the reliability of HfO2 (hafnium oxide) with poly
gate and dual metal gate electrode (Ru-Ta alloy, Ru) was
investigated. Hard breakdown and soft breakdown, particularly the
Weibull slopes, were studied under constant voltage stress. Dynamic
stressing has also been used. It was found that the combination of
trapping and detrapping contributed to the enhancement of the
projected lifetime. The results from the polarity dependence
studies showed that the substrate injection exhibited a shorter
projected lifetime and worse soft breakdown behavior, compared to
the gate injection. The origin of soft breakdown (first breakdown)
was studied and the results suggested that the soft breakdown may
be due to one layer breakdown in the bilayer structure (HfO2/SiO2:
4 nm/4 nm). Low Weibull slope was in part attributed to the lower
barrier height of HfO2 at the interface layer. Interface layer
optimization was conducted in terms of mobility, swing, and short
channel effect using deep submicron MOSFET devices.
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