The quality of physical models is decisive for the understanding of the physical processes in semiconductor devices and for a reliable prediction of the behavior of a new generation of devices. The first part of the book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work, an extensive collection of widely used models is discussed in terms of physical accuracy and application results. The second part outlines the derivation of physics-based models for bulk mobility, band-to-band tunneling, defect-assisted tunneling, thermal recombination, non-ideal metal-semiconductor contact, and direct and multiphonon-assisted tunneling through insulating layers, all from a microscopic level. The models are compared with experimental data and applied to a number of simulation examples. This part also describes some new approaches of "taylored quantum mechanics for deriving device models from "first principles and the fundamental problems therein."

From the reviews: ..". this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field ...], and a useful source of reference for experienced users ..." Microelectronics Journal

Fritz Nathan (1891–1960) zählte zu den aufstrebenden Architekten im Deutschland der Zwanzigerjahre. Mit dem Neuen Jüdischen Friedhof in Frankfurt/Main, seinen Warenhäusern und Industriebauten schuf er signifikante Beispiele des Neuen Bauens. Doch dann führte die nationalsozialistische Diktatur zum jähen Ende der Karriere des jüdischen Architekten. 1940 emigrierte er in die USA und ließ sich in New York nieder. Nach schwierigen Anfängen konnte er in seinem Beruf wieder Fuß fassen. Die längst fällige Würdigung Nathans weist die herausragende Bedeutung seines Beitrags zum Neuen Bauen in Deutschland sowie zur modernen Synagogenarchitektur in den USA nach.