75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Computer-aided-design (CAD) of semiconductor microtransducers is relatively new in contrast to their counterparts in the integrated circuit world. Integrated silicon microtransducers are realized using microfabrication techniques similar to those for standard integrated circuits (ICs). Unlike IC devices, however, microtransducers must interact with their environment, so their numerical simulation is considerably more complex. While the design of ICs aims at suppressing "parasitic effects, microtransducers thrive on optimizing the one or the other such effect. The challenging quest for physical models and simulation tools enabling microtransducer CAD is the topic of this book. It is intended as a text for graduate students in Electrical Engineering and Physics and as a reference for CAD engineers in the microsystems industry. This text evolved from a series of courses offered to graduate students from Electrical Engineering and Physics. Much of the material in the book can be presented in about 40 hours of lecture time. The book starts with an illustrative example which highlights the goals and benefits of microtransducer CAD. This follows with a summary of model equations describing electrical transport in semiconductor devices and microtransducers in the absence of external fields. Models treating the effects of the external radiant, magnetic, thermal, and mechanical fields on electrical transport are then systematically introduced. To enable a smooth transition into modeling of mechanical systems, an abridged version of solid structural and fluid mechanics is presented, whereby the focus is on pertinent model equations and boundary conditions. This follows with model equations and boundary conditions relevant to various types of mechanical microactuators including electrostatic, thermal, magnetic, piezoelectric, and electroacoustic. The book concludes with a glimpse into SPICE simulation of the mixed-signal microsystem, i.e., microtransducer plus circuitry. Where possible, the model equations are supplemented with tables and/or graphs of process-dependent material data to enable the CAD engineer to carry out simulations even when reliable material models are not available. IVZ LANG: Introduction: Modeling and Simulation of Microtransducers; Illustrative Example; Progress in Microtransducer Modeling; References.- Basic Electronic Transport: Poisson s Equation; Continuity Equations; Carrier Transport in Crystalline Materials and Isothermal Behavior; Electrical Conductivity and Isothermal Behavior in Polycrystalline Materials; Electrical Conductivity and Isothermal Behavior in Metals; Boundary and Interface Conditions; The External Fields What Do They Influence?; References.- Radiation Effects on Carrier Transport: Reflection and Transmission of Optical Signals; Modeling Optical Absorption in Intrinsic Semiconductors; Absorption in Heavily-Doped Semiconductors; Optical Generation Rate and Quantum Efficiency; Low Energy Interactions with Insulators and Metals; High Energy Interactions and Monte Carlo Simulations; Model Equations for Radiant Sensor Simulation; Illustrative Simulation Example Color Sensor; References.- Magnetic-Field Effects on Carrier Transport: Galvanomagnetic Transport Equation; Galvanomagnetic Transport Coefficients; Equations and Boundary Conditions for Magnetic Sensor Simulation; Illustrative Simulation Example Micromachined Magnetic Vector Probe; References.- Thermal Non-Uniformity Effects on Carrier Transport: Non-Isothermal Effects; Electrothermal Transport Model; Electrical and Thermal Transport Coefficients; Electro-Thermo-Magnetic Interactions; Heat Transfer in Thermal Microstructures; Summary of Equations and Computational Procedure; Illustrative Simulation Example Micro Pirani Gauge; References.- Mechanical Effects on Carrier Transport: Piezoresistive Effect; Strain and Electron Transport; Strain and Hole Transport; Piezojunction Effect; Effects of Stress Gradients; Galvano-Piezo-Magnetic Effects; The Piezo Drift-Diffusion Transport Model; Illustrative Simulation Example Stress Effects on Hall Sensors; References.- Mechanical and Fluidic Signals: Definitions; Model Equations for Mechanical Analysis; Model Equations for Analysis of Fluid Transport; Illustrative Simulation Example Analysis of Flow Channels; References.- Micro-Actuation: Transduction Principles; State-of-the-Art and Preview; Electrostatic Actuation; Thermal Actuation; Magnetic Actuation; Piezoelectric Actuation; Electroacoustic Transducers; Computational Procedure and Coupling; Illustrative Example CMOS Micromirror.- Microsystem Simulation: Electrical Analogues for Mixed-Signals and Historical Developments; Circuit Modeling and Implementation Considerations; Lumped Analysis: Illustrative Example Electrostatic Micromirror; Distributed Analysis: Illustrative Example Flow Microsensor; References.- Subject Index."

As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.

As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.

Providing a reliable and consolidated treatment of the principles behind large-area electronics, this book provides a comprehensive review of the design challenges associated with building circuits and systems from thin-film transistors. The authors describe the architecture, fabrication and design considerations for the principal types of TFT and their numerous applications. The practicalities of device non-ideality are also addressed and the specific design considerations necessitated by instabilities and non-uniformities in existing fabrication technologies. Containing device-circuit information, discussion of electronic solutions that compensate for material deficiencies, and design methodologies applicable to a wide variety of organic and inorganic disordered materials, this is an essential reference for all researchers, circuit and device engineers working on large-area electronics.

Thin-film silicon materials and their alloys underpin a diverse range of electronic systems, from active matrix flat-panel displays, through solar panels for the 'green-power' generation, to surface micromanaged MEMS devices. Thin-film silicon can possess a diverse range of structures, from being fully amorphous to fully polycrystalline, as well as allowing mixed-phase states, such as micro- and nanocrystalline silicon. Such diversity has made large-area electronics one of the fastest growing semiconductor technologies, although not without introducing some complexity. This book addresses issues related to both fundamental materials science and applied technology and offers an overview of studies on film growth and crystallization, materials characterization, defects, metastability and carrier transport, as well as devices such as solar cells and thin-film transistors. The importance of developing efficient solar cells is reflected in the number of reports that seek to improve lifetime and efficiency, as well as light trapping, in solar cells.

Amorphous, nano-, micro- and polycrystalline silicon thin films and associated alloys are used in a plethora of applications ranging from active matrix displays and imaging arrays to solar panels. These applications make large-area electronics the fastest growing semiconductor technology today, pushing material requirements and device performance to new limits. This book brings together researchers to share their expertise. Materials addressed include amorphous, nano-, micro- and polycrystalline silicon, and their alloys with germanium, carbon and other elements. Topics include: the understanding of growth processes; producing high-quality films at high growth rates or low temperatures; in situ characterization techniques for monitoring growth; understanding amorphous, mixed-phase and crystalline structures, along with the principles for augmenting crystallinity; developing post-deposition processes; identifying fundamental issues in electronic structure and carrier transport in 3D, 2D and 1D; understanding metastability and the role of hydrogen; integrating photovoltaic devices and thin-film electronics into systems on glass, flexible polymeric and other nonconventional substrates; and designing, fabricating and testing devices and applications.

Touch screen panels (TSPs) have become an integral part of modern-day lifestyle. To enhance user experience, attributes such as form-factor flexibility, multi-dimensional sensing, low power consumption and low cost have become highly desirable. This Element addresses the design of multi-functional TSPs with integrated concurrent capture of ubiquitous capacitive touch signals and force information. It compares and contrasts interactive technologies and presents design considerations for multi-dimensional touch screens with high detection sensitivity, accuracy and resolution.