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The first book to deal with the design and optimization of
transistors made from strained layers, Applications of
Silicon-Germanium Heterostructure Devices combines three distinct
topics-technology, device design and simulation, and
applications-in a comprehensive way. Important aspects of the book
include key technology issues for the growth of strained layers,
background theory of the HBT, how device simulation can be used to
predict the optimum HBT device structure for a particular
application such as cryogenics, compact SiGe-HBT models for RF
applications and the SPICE parameter extraction, and strategies for
the enhancement of the high-frequency performance of heterojunction
field effect transistors (HFETs) using MOSFET or MODFET structures.
The book also covers the design and application of optoelectronic
devices and assesses how SiGe technology competes with other
alternative technologies in the RF wireless communications
marketplace.
Currently strain engineering is the main technique used to enhance
the performance of advanced silicon-based metal-oxide-semiconductor
field-effect transistors (MOSFETs). Written from an engineering
application standpoint, Strain-Engineered MOSFETs introduces
promising strain techniques to fabricate strain-engineered MOSFETs
and to methods to assess the applications of these techniques. The
book provides the background and physical insight needed to
understand new and future developments in the modeling and design
of n- and p-MOSFETs at nanoscale. This book focuses on recent
developments in strain-engineered MOSFETS implemented in
high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin
germanium-on-insulator platforms, combined with high-k insulators
and metal-gate. It covers the materials aspects, principles, and
design of advanced devices, fabrication, and applications. It also
presents a full technology computer aided design (TCAD) methodology
for strain-engineering in Si-CMOS technology involving data flow
from process simulation to process variability simulation via
device simulation and generation of SPICE process compact models
for manufacturing for yield optimization. Microelectronics
fabrication is facing serious challenges due to the introduction of
new materials in manufacturing and fundamental limitations of
nanoscale devices that result in increasing unpredictability in the
characteristics of the devices. The down scaling of CMOS
technologies has brought about the increased variability of key
parameters affecting the performance of integrated circuits. This
book provides a single text that combines coverage of the
strain-engineered MOSFETS and their modeling using TCAD, making it
a tool for process technology development and the design of
strain-engineered MOSFETs.
Currently strain engineering is the main technique used to enhance
the performance of advanced silicon-based metal-oxide-semiconductor
field-effect transistors (MOSFETs). Written from an engineering
application standpoint, Strain-Engineered MOSFETs introduces
promising strain techniques to fabricate strain-engineered MOSFETs
and to methods to assess the applications of these techniques. The
book provides the background and physical insight needed to
understand new and future developments in the modeling and design
of n- and p-MOSFETs at nanoscale. This book focuses on recent
developments in strain-engineered MOSFETS implemented in
high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin
germanium-on-insulator platforms, combined with high-k insulators
and metal-gate. It covers the materials aspects, principles, and
design of advanced devices, fabrication, and applications. It also
presents a full technology computer aided design (TCAD) methodology
for strain-engineering in Si-CMOS technology involving data flow
from process simulation to process variability simulation via
device simulation and generation of SPICE process compact models
for manufacturing for yield optimization. Microelectronics
fabrication is facing serious challenges due to the introduction of
new materials in manufacturing and fundamental limitations of
nanoscale devices that result in increasing unpredictability in the
characteristics of the devices. The down scaling of CMOS
technologies has brought about the increased variability of key
parameters affecting the performance of integrated circuits. This
book provides a single text that combines coverage of the
strain-engineered MOSFETS and their modeling using TCAD, making it
a tool for process technology development and the design of
strain-engineered MOSFETs.
Technology Computer Aided Design for Si, SiGe and GaAs Integrated
Circuits is the first book that deals with a broad spectrum of
process and device design, and modelling issues related to various
semiconductor devices. This monograph attempts to bridge the gap
between device modelling and process design using TCAD. Many
simulation examples for different types of Si-, SiGe-, GaAs- and
InP-based heterostructure MOS and bipolar transistors are given and
compared with experimental data from state-of-the-art devices.
Bringing various aspects of silicon heterostructures into one
resource, this book also presents a comprehensive perspective of
the emerging field and covers topics ranging from materials to
fabrication, devices, modelling and applications. The monograph is
aimed at research and development engineers and scientists who are
actively involved in microelectronics technology and device design
via Technology CAD. It will also serve as a reference for
postgraduate and research students in the field of electrical
engineering and solid-state physics, and for TCAD engineers and
developers.
This book comprehensively covers the areas of materials growth,
characterisation and descriptions for the new devices in
siliconheterostructure material systems. In recent years, the
development of powerful epitaxial growth techniques such as
molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour
deposition (UHVCVD) and other low temperature epitaxy techniques
has given rise to a new area of research of bandgap engineering in
silicon-based materials. This has paved the way not only for
heterojunction bipolar and field effect transistors, but also for
other fascinating novel quantum devices. This book provides an
excellent introduction and valuable references for postgraduate
students and research scientists.
A combination of the materials science, manufacturing processes,
and pioneering research and developments of SiGe and strained-Si
have offered an unprecedented high level of performance enhancement
at low manufacturing costs. Encompassing all of these areas,
Strained-Si Heterostructure Field Effect Devices addresses the
research needs associated with the front-end aspects of extending
CMOS technology via strain engineering. The book provides the basis
to compare existing technologies with the future technological
directions of silicon heterostructure CMOS.
After an introduction to the material, subsequent chapters focus on
microelectronics, engineered substrates, MOSFETs, and hetero-FETs.
Each chapter presents recent research findings, industrial devices
and circuits, numerous tables and figures, important references,
and, where applicable, computer simulations. Topics covered include
applications of strained-Si films in SiGe-based CMOS technology,
electronic properties of biaxial strained-Si films, and the
developments of the gate dielectric formation on strained-Si/SiGe
heterolayers. The book also describes silicon hetero-FETs in SiGe
and SiGeC material systems, MOSFET performance enhancement, and
process-induced stress simulation in MOSFETs.
From substrate materials and electronic properties to
strained-Si/SiGe process technology and devices, the diversity of
R&D activities and results presented in this book will no doubt
spark further development in the field.
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