"Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets" is intended to designers and researchers who have to tackle the efficiency/linearity trade-off in modern RF transmitters so as to extend their battery lifetime. High data rate 3G/4G standards feature broad channel bandwidths, high dynamic range and critical envelope variations which generally forces the power amplifier (PA) to operate in a low efficiency "backed-off" regime. Classic efficiency enhancement techniques such as Envelope Elimination and Restoration reveal to be little compliant with handset-dedicated PA implementation due to their channel-bandwidth-limited behavior and their increased die area consumption and/or bill-of-material. The architectural advances that are proposed in this book circumvent these issues since they put the stress on low die-area /low power-consumption control circuitry. The advantages of silicon over III/V technologies are highlighted by several analogue signal processing techniques that can be implemented on-chip with a power amplifier. System-level and transistor-level simulations are combined to illustrate the principles of the proposed power adaptive solutions. Measurement on BICMOS demonstrators allows validating the functionality of dynamic linearity/efficiency management. In "Reconfigurable RF Power Amplifiers on Silicon for Wireless Handsets," PA designers will find a review of technologies, architectures and theoretical formalisms (Volterra series...) that are traditionally related to PA design. Specific issues that one encounters in power amplifiers (such as thermal / memory effects, stability, VSWR sensitivity...) and the way of overcoming them are also extensively considered throughout this book.

Linearization and efficiency improvements in power amplifiers are hot, yet complex topics in RF amplifier design; this book will provide an overview of current efficiency enhancement and linearization techniques for silicon power amplifier designs. It examines the latest state of the art technologies and design techniques to address challenges for RF cellular mobile, base stations, and RF and mmW WLAN applications. It includes material on current silicon (CMOS, SiGe) RF and mmW power amplifier designs, focusing on advantages and disadvantages compared with traditional GaAs implementations.
With this book you will learn:
oThe principles of linearization and efficiency improvement techniques
oThe design flow for RF and/or mmW power amplifiers using these techniques
oArchitectures and techniques allowing the optimum design of multimode Si RF and mmW power amplifiers
oHow to make designs more efficient by employing new design techniques such as linearization and efficiency improvement
oLayout considerations
oExamples of schematic, layout, simulation and measurement results.
Addresses the problems of high power generation, faithful construction of non-constant envelope constellations, and efficient and well control power radiation from integrated silicon chips
Demonstrates how silicon technology can solve problems and trade-offs of power amplifier design, including price, size, complexity and efficiency
Written and edited by the top contributors to the field"