|
Showing 1 - 2 of
2 matches in All Departments
Recently, a significant effort has been devoted to the
investigation of ZnO as a suitable semiconductor for UV
light-emitting diodes, lasers, and detectors and hetero-substrates
for GaN. Research is driven not only by the technological
requirements of state-of-the-art applications but also by the lack
of a fundamental understanding of growth processes, the role of
intrinsic defects and dopants, and the properties of hydrogen. The
NATO Advanced Research Workshop on "Zinc oxide as a material for
micro- and optoelectronic applications," held from June 23 to June
25 2004 in St. Petersburg, Russia, was organized accordingly and
started with the growth of ZnO. A variety of growth methods for
bulk and layer growth were discussed. These techniques comprised
growth methods such as closed space vapor transport (CSVT),
metal-organic chemical vapor deposition, reactive ion sputtering,
and pulsed laser deposition. From a structural point of view using
these growth techniques ZnO can be fabricated ranging from single
crystalline bulk material to polycrystalline ZnO and nanowhiskers.
A major aspect of the ZnO growth is doping. n-type doping is
relatively easy to accomplish with elements such al Al or Ga. At
room temperature single crystal ZnO exhibits a resistivity of about
0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier
concentration of 10 cm . In n-type ZnO two shallow donors are
observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Recently, a significant effort has been devoted to the
investigation of ZnO as a suitable semiconductor for UV
light-emitting diodes, lasers, and detectors and hetero-substrates
for GaN. Research is driven not only by the technological
requirements of state-of-the-art applications but also by the lack
of a fundamental understanding of growth processes, the role of
intrinsic defects and dopants, and the properties of hydrogen. The
NATO Advanced Research Workshop on "Zinc oxide as a material for
micro- and optoelectronic applications," held from June 23 to June
25 2004 in St. Petersburg, Russia, was organized accordingly and
started with the growth of ZnO. A variety of growth methods for
bulk and layer growth were discussed. These techniques comprised
growth methods such as closed space vapor transport (CSVT),
metal-organic chemical vapor deposition, reactive ion sputtering,
and pulsed laser deposition. From a structural point of view using
these growth techniques ZnO can be fabricated ranging from single
crystalline bulk material to polycrystalline ZnO and nanowhiskers.
A major aspect of the ZnO growth is doping. n-type doping is
relatively easy to accomplish with elements such al Al or Ga. At
room temperature single crystal ZnO exhibits a resistivity of about
0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier
concentration of 10 cm . In n-type ZnO two shallow donors are
observable with activation energies of 30 - 40 meV and 60 - 70 meV.
|
You may like...
Loot
Nadine Gordimer
Paperback
(2)
R398
R330
Discovery Miles 3 300
Loot
Nadine Gordimer
Paperback
(2)
R398
R330
Discovery Miles 3 300
|