Focusing on British, French and Russian television news coverage of Islam as a security threat, this book provides the first comparative account of how television broadcasting in different geo- and socio-political environments integrates discourses on Islam into nationally oriented, representational systems.

Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications," held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.

Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications," held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.

Focusing on British, French and Russian television news coverage of Islam as a security threat, this book provides the first comparative account of how television broadcasting in different geo- and socio-political environments integrates discourses on Islam into nationally oriented, representational systems.

Die Erkennung und Behandlung von Entwicklungsstorungen beschaftigt seit Jahrzehnten Padagogen, Therapeuten, Psychologen und Arzte ebenso wie die Eltern betroffener Kinder. Dennoch bestehen immer noch erhebliche Unsicherheiten uber die normale Entwicklung, die Untersuchungsmethoden, die Abgrenzung von normaler und abnormer Entwicklung, die Indikation zur Behandlung und die erreichbaren Erfolge. Dies gilt fur infantile Zerebralparesen ebenso wie fur Teilleistungsstorungen. Die unterschiedlichen Konzepte uber die neurologischen und psychischen Grundlagen der normalen Entwicklung fuhren zu unterschiedlichen Behandlungsansatzen und beeinflussen auch die Behandlungsziele. Die Autoren dieses Buches berichten uber ihre eigenen Erfahrungen und die Ergebnisse wissenschaftlicher Studien in der Diagnostik und Therapie von Entwicklungsstorungen und werten sie kritisch. Sie konzentrieren sich dabei vor allem auf die motorische, perzeptive und kognitive Entwicklung der Kinder bis zur Einschulung.

Title: Instructive moral reading in sixty lessons. Ein Lesebuch, etc.Publisher: British Library, Historical Print EditionsThe British Library is the national library of the United Kingdom. It is one of the world's largest research libraries holding over 150 million items in all known languages and formats: books, journals, newspapers, sound recordings, patents, maps, stamps, prints and much more. Its collections include around 14 million books, along with substantial additional collections of manuscripts and historical items dating back as far as 300 BC.The GENERAL HISTORICAL collection includes books from the British Library digitised by Microsoft. This varied collection includes material that gives readers a 19th century view of the world. Topics include health, education, economics, agriculture, environment, technology, culture, politics, labour and industry, mining, penal policy, and social order. ++++The below data was compiled from various identification fields in the bibliographic record of this title. This data is provided as an additional tool in helping to insure edition identification: ++++ British Library Nickels, H.; 1859. 8 . 12270.e.5.

This book on the Laser Crystallization of Silicon reviews the latest experimental and theoretical studies in the field. It has been written by recognised global authorities and covers the most recent phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon.
Reflecting the truly interdisciplinary nature of the field that the series covers, this volume will continue to be of great interest to physicists, chemists, materials scientists and device engineers in modern industry.
Valuable applications for industry, particularly in the fabrication of thin-film electronics
Each chapter has been peer reviewed
An important and timely contribution to the semiconductor literature

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Key Features
* Provides the most in-depth coverage of hydrogen in silicon available in a single source
* Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference

With the developing progress of materials fabrication, it is possible to produce materials with exciting electronic and magnetic properties which may be candidates for future device applications. One key class of these materials is the metallic magnetic oxide systems. This book focuses on colossal magnetoresistance (CMR) materials, including manganites and cobalites. Transport and magnetic properties and their dependence on stress, growth conditions, stoichiometry and elemental composition are explored quite extensively. However, the large magnetic fields required to obtain the CMR effect have been perceived as a technological roadblock for commercialization of this phenomenon. This has motivated research aimed both at reducing the intrinsic field dependence as well as at developing novel device structures that will reduce the required effective field. Technologically useful devices will undoubtedly involve heterostructures. Since the magnetic and transport properties are extremely stress-dependent, CMR heterostructures will most likely involve other metallic or insulating oxide materials. Materials of interest include half-metallic ferromagnets, yttrium garnet materials and ferrites.