Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of 25 volumes since 1963. The series contains quality studies of the properties of various thin films materials and systems.In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.

Significant progress has occurred during the last few years in device technologies and these are surveyed in this new volume. Included are Si/(Si-Ge) heterojunctions for high-speed integrated circuits, Schottky-barrier arrays in Si and Si-Ge alloys for infrared imaging, III-V quantum-well detector structures operated in the heterodyne mode for high-data-rate communications, and III-V heterostructures and quantum-wells for infrared emissions.

This latest volume of the well-known Physics of Thin Films Series includes four chapters that discuss high-density plasma sources for materials processing, electron cyclotron resonance and its uses, unbalancedmagnetron sputtering, and particle formation in thin film processing plasma.
Key Features
* Chapter One develops a unified framework from which all "high-efficiency" sources may be viewed and compared; outlines key elements of source design affecting processing results; and highlights areas where additional research and development are needed
* Chapter Two reviews and analyzes the main types of electron cyclotron resonance (ECR) plasma sources suitable for ECR PACVD of thin films, mainly ECR sources using magnet coils
* Chapter Three examines the benefits and limitations of the new technique, unbalanced magnetron sputtering (UBM), along with the motivation for its development, the basic principles of its operation and commercial applications, and some speculations regarding the future of UBM technology
* Chapter Four describes general phenomena observed in connection with particle formation in thin film processing plasmas; discusses particles in PECVD plasmas, sputtering plasmas, and RIE plasmas; presents an overview of the theoretical modeling of various aspects of particles in processing plasmas; examines issues of equipment design affecting particle formation; and concludes with remarks about the implications of this work for the control of process-induced particle contamination.

Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of twenty volumes since 1963. The series contains quality studies of the properties of various thinfilms materials and systems.
In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films.
Key Features
* Discusses the latest research about structure, physics, and infrared photoemissive behavior of heavily doped silicon homojunctions and Ge and GaAs-based alloy junctions
* Reviews the current status of SiGe/Si quantum wells for infrared detection
* Discusses key developments in the growing research on quantum-well infrared photodetectors (QWIPs)
* Reviews Chois development of a family of novel three-terminal, multi-quantum well devices designed to improve high-temperature IR detectivity at long wavelengths
* Describes recent studies aimed at using multi-quantum well structures to achieve higher performance in solar cell devices based on materials systems