Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification topics, such as ion-beam mixing, stresses, and sputtering, are also described.

Modern technology depends on materials with precisely controlled properties. Ion beams are a favored method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition, in integrated circuit technology, ion beams are used to modify the mechanical, tribological, and chemical properties of metal, intermetallic, and ceramic materials without altering their bulk properties. Ion-solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion-solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering, and materials science issues associated with metastable phase synthesis.

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization. The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nuclear reaction analysis. The second part turns to applications, looking at the broad range of potential uses in thin film reactions, ion implantation, nuclear energy, biology, and art/archaeology. Examines classical collision theory Details the fundamentals of five specific ion beam analysis techniques Illustrates specific applications, including biomedicine and thin film analysis Provides examples of ion beam analysis in traditional and emerging research fields Supplying readers with the means to understand the benefits and limitations of IBA, the book offers practical information that users can immediately apply to their own work. It covers the broad range of current and emerging applications in materials science, physics, art, archaeology, and biology. It also includes a chapter on computer applications of IBA.

This book focuses on the emerging class of new materials characterized by ultra-fine microstrucures. The NATO ASI which produced this book was the first international scientific meeting devoted to a discussion of the mechanical properties and deformation behavior of materials having grain sizes down to a few nanometers. Topics covered include superplasticity, tribology, and the supermodulus effect. Review chapters cover a variety of other themes including synthesis, characterization, thermodynamic stability, and general physical properties. Much of the work is concerned with the issue of how far conventional techniques and concepts can be extended toward atomic scale probing. Another key issue concerns the structure of nanocrystalline materials, in particular, what is the structure and composition of the internal boundaries. These ultra-fine microstructures have proved to challenge even the finest probes that the materials science community has today.

The Handbook of Modern Ion Beam Materials Analysis, Second Edition is a compilation of updated techniques and data for use in the ion-beam analysis of materials. The information presented is unavailable collectively from any other source, and places a strong emphasis on practical examples of the analysis techniques as they are applied to common problems. Revised and updated from the popular handbook previously released in 1995, this edition is written and compiled by over 30 leading authorities in the field of ion beam analysis and is an important reference tool for technicians, students and professionals. It is an excellent introduction to the fundamentals and lab practices of ion beam analysis and useful as a teaching text for undergraduate senior or first-year graduate students. It is the most recent and comprehensive collection of nuclear and atomic data for the applications of ion beam materials analysis.

Ion Beam Analysis: Fundamentals and Applications explains the basic characteristics of ion beams as applied to the analysis of materials, as well as ion beam analysis (IBA) of art/archaeological objects. It focuses on the fundamentals and applications of ion beam methods of materials characterization. The book explains how ions interact with solids and describes what information can be gained. It starts by covering the fundamentals of ion beam analysis, including kinematics, ion stopping, Rutherford backscattering, channeling, elastic recoil detection, particle induced x-ray emission, and nuclear reaction analysis. The second part turns to applications, looking at the broad range of potential uses in thin film reactions, ion implantation, nuclear energy, biology, and art/archaeology. Examines classical collision theory Details the fundamentals of five specific ion beam analysis techniques Illustrates specific applications, including biomedicine and thin film analysis Provides examples of ion beam analysis in traditional and emerging research fields Supplying readers with the means to understand the benefits and limitations of IBA, the book offers practical information that users can immediately apply to their own work. It covers the broad range of current and emerging applications in materials science, physics, art, archaeology, and biology. It also includes a chapter on computer applications of IBA.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.

Modern technology depends on materials with precisely controlled properties. Ion beams are a favored method to achieve controlled modification of surface and near-surface regions. In every integrated circuit production line, for example, there are ion implantation systems. In addition, in integrated circuit technology, ion beams are used to modify the mechanical, tribological, and chemical properties of metal, intermetallic, and ceramic materials without altering their bulk properties. Ion-solid interactions are the foundation that underlies the broad application of ion beams to the modification of materials. This text is designed to cover the fundamentals and applications of ion-solid interactions and is aimed at graduate students and researchers interested in electronic devices, surface engineering, reactor and nuclear engineering, and materials science issues associated with metastable phase synthesis.