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Books > Science & Mathematics > Physics > Particle & high-energy physics
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Ion Implantation and Synthesis of Materials (Hardcover, 2006 ed.)
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Ion Implantation and Synthesis of Materials (Hardcover, 2006 ed.)
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Ion implantation is one of the key processing steps in silicon
integrated circuit technology. Some integrated circuits require up
to 17 implantation steps and circuits are seldom processed with
less than 10 implantation steps. Controlled doping at controlled
depths is an essential feature of implantation. Ion beam processing
can also be used to improve corrosion resistance, to harden
surfaces, to reduce wear and, in general, to improve materials
properties. This book presents the physics and materials science of
ion implantation and ion beam modification of materials. It covers
ion-solid interactions used to predict ion ranges, ion straggling
and lattice disorder. Also treated are shallow-junction formation
and slicing silicon with hydrogen ion beams. Topics important for
materials modification topics, such as ion-beam mixing, stresses,
and sputtering, are also described.
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