Ion Implantation and Synthesis of Materials (Hardcover, 2006 ed.)

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification topics, such as ion-beam mixing, stresses, and sputtering, are also described.

General

Imprint:	Springer-Verlag
Country of origin:	Germany
Release date:	August 2006
First published:	2006
Authors:	Michael Nastasi • James W. Mayer
Dimensions:	234 x 156 x 17mm (L x W x T)
Format:	Hardcover - Laminated cover
Pages:	263
Edition:	2006 ed.
ISBN-13:	978-3-540-23674-0
Categories:	Books > Science & Mathematics > Physics > Particle & high-energy physics Books > Science & Mathematics > Physics > States of matter > General Books > Science & Mathematics > Chemistry > Physical chemistry > General Books > Professional & Technical > Mechanical engineering & materials > Materials science > Testing of materials > General Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General
LSN:	3-540-23674-0
Barcode:	9783540236740

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