|
Showing 1 - 4 of
4 matches in All Departments
Recently, a significant effort has been devoted to the
investigation of ZnO as a suitable semiconductor for UV
light-emitting diodes, lasers, and detectors and hetero-substrates
for GaN. Research is driven not only by the technological
requirements of state-of-the-art applications but also by the lack
of a fundamental understanding of growth processes, the role of
intrinsic defects and dopants, and the properties of hydrogen. The
NATO Advanced Research Workshop on "Zinc oxide as a material for
micro- and optoelectronic applications," held from June 23 to June
25 2004 in St. Petersburg, Russia, was organized accordingly and
started with the growth of ZnO. A variety of growth methods for
bulk and layer growth were discussed. These techniques comprised
growth methods such as closed space vapor transport (CSVT),
metal-organic chemical vapor deposition, reactive ion sputtering,
and pulsed laser deposition. From a structural point of view using
these growth techniques ZnO can be fabricated ranging from single
crystalline bulk material to polycrystalline ZnO and nanowhiskers.
A major aspect of the ZnO growth is doping. n-type doping is
relatively easy to accomplish with elements such al Al or Ga. At
room temperature single crystal ZnO exhibits a resistivity of about
0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier
concentration of 10 cm . In n-type ZnO two shallow donors are
observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Recently, a significant effort has been devoted to the
investigation of ZnO as a suitable semiconductor for UV
light-emitting diodes, lasers, and detectors and hetero-substrates
for GaN. Research is driven not only by the technological
requirements of state-of-the-art applications but also by the lack
of a fundamental understanding of growth processes, the role of
intrinsic defects and dopants, and the properties of hydrogen. The
NATO Advanced Research Workshop on "Zinc oxide as a material for
micro- and optoelectronic applications," held from June 23 to June
25 2004 in St. Petersburg, Russia, was organized accordingly and
started with the growth of ZnO. A variety of growth methods for
bulk and layer growth were discussed. These techniques comprised
growth methods such as closed space vapor transport (CSVT),
metal-organic chemical vapor deposition, reactive ion sputtering,
and pulsed laser deposition. From a structural point of view using
these growth techniques ZnO can be fabricated ranging from single
crystalline bulk material to polycrystalline ZnO and nanowhiskers.
A major aspect of the ZnO growth is doping. n-type doping is
relatively easy to accomplish with elements such al Al or Ga. At
room temperature single crystal ZnO exhibits a resistivity of about
0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier
concentration of 10 cm . In n-type ZnO two shallow donors are
observable with activation energies of 30 - 40 meV and 60 - 70 meV.
This book on the Laser Crystallization of Silicon reviews the
latest experimental and theoretical studies in the field. It has
been written by recognised global authorities and covers the most
recent phenomena related to the laser crystallization process and
the properties of the resulting polycrystalline silicon.
Reflecting the truly interdisciplinary nature of the field that the
series covers, this volume will continue to be of great interest to
physicists, chemists, materials scientists and device engineers in
modern industry.
Valuable applications for industry, particularly in the fabrication
of thin-film electronics
Each chapter has been peer reviewed
An important and timely contribution to the semiconductor
literature
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Key Features
* Provides the most in-depth coverage of hydrogen in silicon
available in a single source
* Includes an extensive chapter on the neutralization of defects in
III*b1V semiconductors**Combines both experimental and theoretical
studies to form a comprehensive reference
|
|