|
Showing 1 - 9 of
9 matches in All Departments
This pertinent and highly original volume explores how ideas of
Europe and processes of continental political, socio-economic, and
cultural integration have been intertwined since the nineteenth
century. Applying a wider definition of Europeanization in the
sense of "becoming European", it will pay equal attention to
counter-processes of disentanglement and disintegration that have
accompanied, slowed down, or displaced such trends and
developments. By focusing on the practices, agents, and experience
of Europeanization, the volume strives to bring together the
history of ideas and the history of human actions and conduct, two
approaches that are usually treated separately in the field of
European studies.
Basically all properties of semiconductor devices are influenced by
the distribution of point defects in their active areas. This book
contains the first comprehensive review of the properties of
intrinsic point defects, acceptor and donor impurities, isovalent
atoms, chalcogens, and halogens in silicon, as well as of their
complexes. Special emphasis is placed on compiling the structures,
energetic properties, identified electrical levels and
spectroscopic signatures, and the diffusion behavior from
experimental and theoretical investigations. In addition, the book
discusses the fundamental concepts of silicon and its defects, the
electron system, diffusion, thermodynamics, and reaction kinetics
which form the scientific basis needed for a thorough understanding
of the text. Therefore, the book is able to provide an introduction
to newcomers in this field up to a comprehensive reference for
experts in process technology, solid-state physics, and simulation
of semiconductor processes.
SISDEP a (TM)95 provides an international forum for the
presentation of state-of-the-art research and development results
in the area of numerical process and device simulation.
Continuously shrinking device dimensions, the use of new materials,
and advanced processing steps in the manufacturing of semiconductor
devices require new and improved software. The trend towards
increasing complexity in structures and process technology demands
advanced models describing all basic effects and sophisticated two
and three dimensional tools for almost arbitrarily designed
geometries. The book contains the latest results obtained by
scientists from more than 20 countries on process simulation and
modeling, simulation of process equipment, device modeling and
simulation of novel devices, power semiconductors, and sensors, on
device simulation and parameter extraction for circuit models,
practical application of simulation, numerical methods, and
software.
This book contains the first comprehensive review of intrinsic
point defects, impurities and their complexes in silicon. Besides
compiling the structures, energetic properties, identified
electrical levels and spectroscopic signatures, and the diffusion
behaviour from investigations, it gives a comprehensive
introduction into the relevant fundamental concepts.
SISDEP 95 provides an international forum for the presentation of
state-of-the-art research and development results in the area of
numerical process and device simulation. Continuously shrinking
device dimensions, the use of new materials, and advanced
processing steps in the manufacturing of semiconductor devices
require new and improved software. The trend towards increasing
complexity in structures and process technology demands advanced
models describing all basic effects and sophisticated two and three
dimensional tools for almost arbitrarily designed geometries. The
book contains the latest results obtained by scientists from more
than 20 countries on process simulation and modeling, simulation of
process equipment, device modeling and simulation of novel devices,
power semiconductors, and sensors, on device simulation and
parameter extraction for circuit models, practical application of
simulation, numerical methods, and software."
Das Buch prasentiert einen programmatischen Ansatz einer aktuellen
Zeithistorie und versteht sich als kritischer Beitrag der
Orientierungswissenschaft im Anschluss an das Spatwerk Michel
Foucaults. Die derzeitige Diskussion setzt sich nur ungenugend mit
der Epoche seit 1989 auseinander. Globalisierung, regionale
Integration, wirtschaftliche Krisen, Migration, Finanzwirtschaft
und Terrorismus kennzeichnen eine neue Geschichte. Neue Freiheiten
und Ambivalenzen der Kultur in Digitalisierung, Migration und
Kommunikation bewirken Unsicherheiten, AEngste und
Orientierungsverluste, gar den Zusammenbruch lange vorherrschender
Identitatslandschaften. Das Buch greift dies auf, verortet sich
theoretisch in der neuen Zeit und schlagt empirische Themenbereiche
vor.
|
|