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Polycrystalline SiGe has emerged as a promising MEMS
(Microelectromechanical Systems) structural material since it
provides the desired mechanical properties at lower temperatures
compared to poly-Si, allowing the direct post-processing on top of
CMOS. This CMOS-MEMS monolithic integration can lead to more
compact MEMS with improved performance. The potential of poly-SiGe
for MEMS above-aluminum-backend CMOS integration has already been
demonstrated. However, aggressive interconnect scaling has led to
the replacement of the traditional aluminum metallization by copper
(Cu) metallization, due to its lower resistivity and improved
reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the
compatibility of poly-SiGe with post-processing above the advanced
CMOS technology nodes through the successful fabrication of an
integrated poly-SiGe piezoresistive pressure sensor, directly
fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book
presents the first detailed investigation on the influence of
deposition conditions, germanium content and doping concentration
on the electrical and piezoresistive properties of boron-doped
poly-SiGe. The development of a CMOS-compatible process flow, with
special attention to the sealing method, is also described.
Piezoresistive pressure sensors with different areas and
piezoresistor designs were fabricated and tested. Together with the
piezoresistive pressure sensors, also functional capacitive
pressure sensors were successfully fabricated on the same wafer,
proving the versatility of poly-SiGe for MEMS sensor applications.
Finally, a detailed analysis of the MEMS processing impact on the
underlying CMOS circuit is also presented.
Polycrystalline SiGe has emerged as a promising MEMS
(Microelectromechanical Systems) structural material since it
provides the desired mechanical properties at lower temperatures
compared to poly-Si, allowing the direct post-processing on top of
CMOS. This CMOS-MEMS monolithic integration can lead to more
compact MEMS with improved performance. The potential of poly-SiGe
for MEMS above-aluminum-backend CMOS integration has already been
demonstrated. However, aggressive interconnect scaling has led to
the replacement of the traditional aluminum metallization by copper
(Cu) metallization, due to its lower resistivity and improved
reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the
compatibility of poly-SiGe with post-processing above the advanced
CMOS technology nodes through the successful fabrication of an
integrated poly-SiGe piezoresistive pressure sensor, directly
fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book
presents the first detailed investigation on the influence of
deposition conditions, germanium content and doping concentration
on the electrical and piezoresistive properties of boron-doped
poly-SiGe. The development of a CMOS-compatible process flow, with
special attention to the sealing method, is also described.
Piezoresistive pressure sensors with different areas and
piezoresistor designs were fabricated and tested. Together with the
piezoresistive pressure sensors, also functional capacitive
pressure sensors were successfully fabricated on the same wafer,
proving the versatility of poly-SiGe for MEMS sensor applications.
Finally, a detailed analysis of the MEMS processing impact on the
underlying CMOS circuit is also presented.
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Para Cenar Habra Nostalgia (Paperback)
Fior E Plasencia; Illustrated by Jarlyne Batista; Edited by Pilar Gonzalez
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R389
R323
Discovery Miles 3 230
Save R66 (17%)
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Ships in 10 - 15 working days
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La incorporacion de nuevas y mas complejas Tecnologias de la
Informacion y de la Comunicacion (TICs) favorecen el trabajo de
equipo colaborativo en las organizaciones, reducen las
restricciones temporales y espaciales, y minimizan costes. Sin
embargo, se sabe que las TICs conllevan una serie de limitaciones
relacionadas con la comunicacion que son fuente de conflicto y
obstaculizan el pleno rendimiento de estos equipos. En este
contexto, uno de los elementos clave para hacer frente a los
conflictos es su gestion. En esta obra, se ofrece una revision de
estos elementos y se analiza la literatura sobre gestion del
conflicto y el tipo de estrategias que utilizan los equipos para
afrontar sus conflictos. Ademas, se presentan algunas herramientas
de gestion que podrian utilizar los coordinadores o gestores de
equipos para facilitar la colaboracion entre los miembros de
equipos virtuales y gestionar sus posibles conflictos de forma que
se potencien los efectos funcionales del conflicto y disminuyan los
efectos disfuncionales del mismo.
Davant l'evidencia de que els directius massa sovint han de prendre
decisions basant-se en una informacio inconsistent, imprecisa i
prematura, es considera oportu fer una aportacio estrategica per
optimitzar la captura d'informacio que realitzen. Si be aquesta
informacio pot ser obtinguda per diverses vies, en aquesta ocasio
ens hem centrat en les xarxes socials com a font d'informacio util
per a la presa de decisions. I ens preguntem si els directius que
ocupen una millor posicio a la xarxa, disposen tambe d'una millor
informacio de cara a dur a terme les funcions d'intel ligencia
propies del seu carrec. L'objectiu d'aquest estudi es doncs:
analitzar en quina mesura les xarxes socials constitueixen un
instrument de suport a les funcions d'intel ligencia competitiva de
les directores dels departaments d'infermeria dels centres que
formen part de la Xarxa Hospitalaria d'Utilitzacio Publica (XHUP).
Aixi mateix es presenta un model per donar suport a les funcions
d'intel ligencia competitiva de les directores dels departaments
d'infermeria."
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