Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.

La incorporacion de nuevas y mas complejas Tecnologias de la Informacion y de la Comunicacion (TICs) favorecen el trabajo de equipo colaborativo en las organizaciones, reducen las restricciones temporales y espaciales, y minimizan costes. Sin embargo, se sabe que las TICs conllevan una serie de limitaciones relacionadas con la comunicacion que son fuente de conflicto y obstaculizan el pleno rendimiento de estos equipos. En este contexto, uno de los elementos clave para hacer frente a los conflictos es su gestion. En esta obra, se ofrece una revision de estos elementos y se analiza la literatura sobre gestion del conflicto y el tipo de estrategias que utilizan los equipos para afrontar sus conflictos. Ademas, se presentan algunas herramientas de gestion que podrian utilizar los coordinadores o gestores de equipos para facilitar la colaboracion entre los miembros de equipos virtuales y gestionar sus posibles conflictos de forma que se potencien los efectos funcionales del conflicto y disminuyan los efectos disfuncionales del mismo.

Davant l'evidencia de que els directius massa sovint han de prendre decisions basant-se en una informacio inconsistent, imprecisa i prematura, es considera oportu fer una aportacio estrategica per optimitzar la captura d'informacio que realitzen. Si be aquesta informacio pot ser obtinguda per diverses vies, en aquesta ocasio ens hem centrat en les xarxes socials com a font d'informacio util per a la presa de decisions. I ens preguntem si els directius que ocupen una millor posicio a la xarxa, disposen tambe d'una millor informacio de cara a dur a terme les funcions d'intel ligencia propies del seu carrec. L'objectiu d'aquest estudi es doncs: analitzar en quina mesura les xarxes socials constitueixen un instrument de suport a les funcions d'intel ligencia competitiva de les directores dels departaments d'infermeria dels centres que formen part de la Xarxa Hospitalaria d'Utilitzacio Publica (XHUP). Aixi mateix es presenta un model per donar suport a les funcions d'intel ligencia competitiva de les directores dels departaments d'infermeria."