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Poly-SiGe for MEMS-above-CMOS Sensors (Hardcover, 2014 ed.)
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Poly-SiGe for MEMS-above-CMOS Sensors (Hardcover, 2014 ed.)
Series: Springer Series in Advanced Microelectronics, 44
Expected to ship within 12 - 19 working days
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Polycrystalline SiGe has emerged as a promising MEMS
(Microelectromechanical Systems) structural material since it
provides the desired mechanical properties at lower temperatures
compared to poly-Si, allowing the direct post-processing on top of
CMOS. This CMOS-MEMS monolithic integration can lead to more
compact MEMS with improved performance. The potential of poly-SiGe
for MEMS above-aluminum-backend CMOS integration has already been
demonstrated. However, aggressive interconnect scaling has led to
the replacement of the traditional aluminum metallization by copper
(Cu) metallization, due to its lower resistivity and improved
reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the
compatibility of poly-SiGe with post-processing above the advanced
CMOS technology nodes through the successful fabrication of an
integrated poly-SiGe piezoresistive pressure sensor, directly
fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book
presents the first detailed investigation on the influence of
deposition conditions, germanium content and doping concentration
on the electrical and piezoresistive properties of boron-doped
poly-SiGe. The development of a CMOS-compatible process flow, with
special attention to the sealing method, is also described.
Piezoresistive pressure sensors with different areas and
piezoresistor designs were fabricated and tested. Together with the
piezoresistive pressure sensors, also functional capacitive
pressure sensors were successfully fabricated on the same wafer,
proving the versatility of poly-SiGe for MEMS sensor applications.
Finally, a detailed analysis of the MEMS processing impact on the
underlying CMOS circuit is also presented.
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