|
Showing 1 - 15 of
15 matches in All Departments
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The Willardson and Beer series, as it is widely
known, has succeeded in producing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Key Features
* Provides the most in-depth coverage of hydrogen in silicon
available in a single source
* Includes an extensive chapter on the neutralization of defects in
III*b1V semiconductors**Combines both experimental and theoretical
studies to form a comprehensive reference
This volume is concerned with the crystal growth, optical
properties, and optical device application of the self-formed
quantum dot, which is one of the major current subjects in the
semiconductor research field.
The atom-like density of states in quantum dots is expected to
drastically improve semiconductor laser performance, and to develop
new optical devices. However, since the first theoretical
prediction for its great possibilities was presented in 1982, due
to the difficulty of their fabrication process. Recently, the
advent of self-organized quantum dots has made it possible to apply
the results in important optical devices, and further progress is
expected in the near future.
The authors, working for Fujitsu Laboratories, are leading this
quantum-dot research field. In this volume, they describe the state
of the art in the entire field, with particular emphasis on
practical applications.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise that this tradition will be
maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise indeed that this tradition
will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise indeed that this tradition
will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Volumes 54 and 55 present contributions by leading researchers in
the field of high pressure semiconductors. Edited by T. Suski and
W. Paul, these volumes continue the tradition of well-known but
outdated publications such as Brigman's The Physics of High
Pressure (1931 and 1949) and High Pressure Physics and Chemistry
edited by Bradley.
Volumes 54 and 55 reflectthe industrially important recent
developments in research and applications of semiconductor
properties and behavior under desirable risk-free conditions at
high pressures. These developments include the advent of the
diamond anvil cell technique and the availability of commercial
piston-cylinder apparatus operating at high hydrostatic pressures.
These much-needed books will be useful to both researchers and
practitioners in applied physics, materials science, and
engineering.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The "Willardson and Beer" Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise indeed that this tradition
will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineers in modern
industry.
Volumes 54 and 55 present contributions by leading researchers in
the field of high pressure semiconductors. Edited by T. Suski and
W. Paul, these volumes continue the tradition of well-known but
outdated publications such as Brigman's The Physics of High
Pressure (1931 and 1949) and High Pressure Physics and Chemistry
edited by Bradley.
Volumes 54 and 55 reflectthe industrially important recent
developments in research and applications of semiconductor
properties and behavior under desirable risk-free conditions at
high pressures. These developments include the advent of the
diamond anvil cell technique and the availability of commercial
piston-cylinder apparatus operating at high hydrostatic pressures.
These much-needed books will be useful to both researchers and
practitioners in applied physics, materials science, and
engineering.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors.The"Willardson and Beer"Series, as it is widely known,
has succeeded in publishing numerous landmark volumes and chapters.
Not only did many of these volumes make an impact at the time of
their publication, but they continue to be well-cited years after
their original release. Recently, Professor Eicke R. Weber of the
University of California at Berkeley joined as a co-editor of the
series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise indeed that this tradition
will be maintained and even expanded.Reflecting the truly
interdisciplinary nature of the field that the series covers, the
volumes in Semiconductors and Semimetals have been and will
continue to be of great interest to physicists, chemists, materials
scientists, and device engineers in modern industry.
This volume addresses the subject of materials science,
specifically the materials aspects, device applications, and
fabricating technology of SiC.
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors.The"Willardson and Beer"Series, as it is widely known,
has succeeded in publishing numerous landmark volumes and chapters.
Not only did many of these volumes make an impact at the time of
their publication, but they continue to be well-cited years after
their original release. Recently, Professor Eicke R. Weber of the
University of California at Berkeley joined as a co-editor of the
series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise indeed that this tradition
will be maintained and even expanded.Reflecting the truly
interdisciplinary nature of the field that the series covers, the
volumes in Semiconductors and Semimetals have been and will
continue to be of great interest to physicists, chemists, materials
scientists, and device engineers in modern industry.
Defects in ion-implanted semiconductors are important and will
likely gain increased importance as annealing temperatures are
reduced with successive IC generations. Novel implant approaches,
such as MdV implantation, create new types of defects whose origin
and annealing characteristics will need to be addressed.
Publications in this field mainly focus on the effects of ion
implantation on the material and the modification in the implanted
layer after high temperature annealing. The editors of this volume
and Volume 45 focus on the physics of the annealing kinetics of the
damaged layer. An overview of characterization tehniques and a
critical comparison of the information on annealing kinetics is
also presented.
Key Features
* Provides basic knowledge of ion implantation-induced
defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools
for processed semiconductors
* Provides the basis for understanding the problems caused by the
defects generated by implantation and the means for their
characterization and elimination
Since its inception in 1966, the series of numbered volumes known
as Semiconductors and Semimetals has distinguished itself through
the careful selection of well-known authors, editors, and
contributors. The"Willardson and Beer"Series, as it is widely
known, has succeeded in publishing numerous landmark volumes and
chapters. Not only did many of these volumes make an impact at the
time of their publication, but they continue to be well-cited years
after their original release. Recently, Professor Eicke R. Weber of
the University of California at Berkeley joined as a co-editor of
the series. Professor Weber, a well-known expert in the field of
semiconductor materials, will further contribute to continuing the
series' tradition of publishing timely, highly relevant, and
long-impacting volumes. Some of the recent volumes, such as
Hydrogen in Semiconductors, Imperfections in III/V Materials,
Epitaxial Microstructures, High-Speed Heterostructure Devices,
Oxygen in Silicon, and others promise indeed that this tradition
will be maintained and even expanded.
Reflecting the truly interdisciplinary nature of the field that the
series covers, the volumes in Semiconductors and Semimetals have
been and will continue to be of great interest to physicists,
chemists, materials scientists, and device engineersin modern
industry.
Key Features
* One of the first comprehensive works on room-temperature nuclear
detectors
* Edited by technical experts in the field
* Written by recognized authorities from industrial and academic
institutions
* Focused on the electrical, optical, and structural properties of
semiconductors used for room-temperature nuclear detectors
Volume 41 includes an in-depth review of the most important,
high-speed switches made with heterojunction technology. This
volume is aimed at the graduate student or working researcher who
needs a broad overview andan introduction to current literature.
Key Features
* The first complete review of InP-based HFETs and complementary
HFETs, which promise very low power and high speed
* Offers a complete, three-chapter review of resonant
tunneling
* Provides an emphasis on circuits as well as devices
|
You may like...
The HOUSE
Brian Parks
Paperback
R302
Discovery Miles 3 020
|