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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, Volume 46 (Hardcover)
Loot Price: R6,019
Discovery Miles 60 190
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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization, Volume 46 (Hardcover)
Series: Semiconductors and Semimetals
Expected to ship within 12 - 17 working days
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Defects in ion-implanted semiconductors are important and will
likely gain increased importance as annealing temperatures are
reduced with successive IC generations. Novel implant approaches,
such as MdV implantation, create new types of defects whose origin
and annealing characteristics will need to be addressed.
Publications in this field mainly focus on the effects of ion
implantation on the material and the modification in the implanted
layer after high temperature annealing. The editors of this volume
and Volume 45 focus on the physics of the annealing kinetics of the
damaged layer. An overview of characterization tehniques and a
critical comparison of the information on annealing kinetics is
also presented.
Key Features
* Provides basic knowledge of ion implantation-induced
defects
* Focuses on physical mechanisms of defect annealing
* Utilizes electrical, physical, and optical characterization tools
for processed semiconductors
* Provides the basis for understanding the problems caused by the
defects generated by implantation and the means for their
characterization and elimination
General
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