Semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transistors (HEMTs), are among the fastest and most advanced high-frequency devices. The topic of this book is the physical modeling of modern submicron heterostructure devices. In particular, a detailed discussion of models and parameters for compound semiconductors is presented. Based on the comprehensive modeling more than 25 simulation examples for several different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based HEMTs and HBTs are shown in comparison with experimental data from state-of-the-art devices. Device-specific optimization potentials are discussed systematically. This book is of interest for device and circuit designers in semiconductor development and industry. It is strongly recommended for advanced undergraduate and graduate students, for researchers in the field of electrical engineering and solid-state physics, for TCAD users and developers, and for researchers who are looking for practical application of their scientific work.

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.