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Analysis and Simulation of Heterostructure Devices (Paperback, Softcover reprint of the original 1st ed. 2004)
Loot Price: R4,237
Discovery Miles 42 370
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Analysis and Simulation of Heterostructure Devices (Paperback, Softcover reprint of the original 1st ed. 2004)
Series: Computational Microelectronics
Expected to ship within 10 - 15 working days
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Semiconductor heterostructure devices, such as Heterojunction
Bipolar Transistors (HBTs) and High Electron Mobility Transistors
(HEMTs), are among the fastest and most advanced high-frequency
devices. The topic of this book is the physical modeling of modern
submicron heterostructure devices. In particular, a detailed
discussion of models and parameters for compound semiconductors is
presented. Based on the comprehensive modeling more than 25
simulation examples for several different types of Si(Ge)-based,
GaAs-based, InP-based, and GaN-based HEMTs and HBTs are shown in
comparison with experimental data from state-of-the-art devices.
Device-specific optimization potentials are discussed
systematically. This book is of interest for device and circuit
designers in semiconductor development and industry. It is strongly
recommended for advanced undergraduate and graduate students, for
researchers in the field of electrical engineering and solid-state
physics, for TCAD users and developers, and for researchers who are
looking for practical application of their scientific work.
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