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This volume contains the proceedings of the 12th International
Conference on Simulation of Semiconductor Processes and Devices,
SISPAD 2007, held September 2007 in Vienna, Austria. It provides a
global forum for the presentation and discussion of recent advances
and developments in the theoretical description, physical modeling
and numerical simulation and analysis of semiconductor fabrication
processes, device operation and system performance.
The "Fifth International Conference on Simulation of Semiconductor
Devices and Processes" (SISDEP 93) continues a series of
conferences which was initiated in 1984 by K. Board and D. R. J.
Owen at the University College of Wales, Swansea, where it took
place a second time in 1986. Its organization was succeeded by G.
Baccarani and M. Rudan at the University of Bologna in 1988, and W.
Fichtner and D. Aemmer at the Federal Institute of Technology in
Zurich in 1991. This year the conference is held at the Technical
University of Vienna, Austria, September 7 - 9, 1993. This
conference shall provide an international forum for the
presentation of out standing research and development results in
the area of numerical process and de vice simulation. The
miniaturization of today's semiconductor devices, the usage of new
materials and advanced process steps in the development of new
semiconduc tor technologies suggests the design of new computer
programs. This trend towards more complex structures and
increasingly sophisticated processes demands advanced simulators,
such as fully three-dimensional tools for almost arbitrarily
complicated geometries. With the increasing need for better models
and improved understand ing of physical effects, the Conference on
Simulation of Semiconductor Devices and Processes brings together
the simulation community and the process- and device en gineers who
need reliable numerical simulation tools for characterization,
prediction, and development."
As the cost of developing new semiconductor technology at ever
higher bit/gate densities continues to grow, the value of using
accurate TCAD simu lation tools for design and development becomes
more and more of a necessity to compete in today's business. The
ability to tradeoff wafer starts in an advanced piloting facility
for simulation analysis and optimization utilizing a "virtual fab"
S/W tool set is a clear economical asset for any semiconductor
development company. Consequently, development of more
sophisticated, accurate, physics-based, and easy-to-use device and
process modeling tools will receive continuing attention over the
coming years. The cost of maintaining and paying for one's own
internal modeling tool development effort, however, has caused many
semiconductor development companies to consider replacing some or
all of their internal tool development effort with the purchase of
vendor modeling tools. While some (noteably larger) companies have
insisted on maintaining their own internal modeling tool
development organization, others have elected to depend totally on
the tools offered by the TCAD vendors and have consequently reduced
their mod eling staffs to a bare minimal support function. Others
are seeking to combine the best of their internally developed tool
suite with "robust," "proven" tools provided by the vendors, hoping
to achieve a certain synergy as well as savings through this
approach. In the following sections we describe IBM's internally
developed suite of TCAD modeling tools and show several
applications of the use of these tools."
This volume contains the proceedings of the 12th International
Conference on Simulation of Semiconductor Processes and Devices,
SISPAD 2007, held September 2007 in Vienna, Austria. It provides a
global forum for the presentation and discussion of recent advances
and developments in the theoretical description, physical modeling
and numerical simulation and analysis of semiconductor fabrication
processes, device operation and system performance.
The book serves as a synergistic link between the development of
mathematical models and the emergence of stochastic (Monte Carlo)
methods applied for the simulation of current transport in
electronic devices. Regarding the models, the historical evolution
path, beginning from the classical charge carrier transport models
for microelectronics to current quantum-based nanoelectronics, is
explicatively followed. Accordingly, the solution methods are
elucidated from the early phenomenological single particle
algorithms applicable for stationary homogeneous physical
conditions up to the complex algorithms required for quantum
transport, based on particle generation and annihilation. The book
fills the gap between monographs focusing on the development of the
theory and the physical aspects of models, their application, and
their solution methods and monographs dealing with the purely
theoretical approaches for finding stochastic solutions of Fredholm
integral equations.
The book serves as a synergistic link between the development of
mathematical models and the emergence of stochastic (Monte Carlo)
methods applied for the simulation of current transport in
electronic devices. Regarding the models, the historical evolution
path, beginning from the classical charge carrier transport models
for microelectronics to current quantum-based nanoelectronics, is
explicatively followed. Accordingly, the solution methods are
elucidated from the early phenomenological single particle
algorithms applicable for stationary homogeneous physical
conditions up to the complex algorithms required for quantum
transport, based on particle generation and annihilation. The book
fills the gap between monographs focusing on the development of the
theory and the physical aspects of models, their application, and
their solution methods and monographs dealing with the purely
theoretical approaches for finding stochastic solutions of Fredholm
integral equations.
C ist eine der bedeutendsten und eine sehr haufig eingesetzte
Programmiersprache. Die Autoren haben jahrelange Erfahrung mit
dieser Programmiersprache und vermitteln Lesern das Wesentliche -
die Programmiermethodik: Was ist Programmieren? Wie werden
programmtechnische Probleme geloest? Schrittweise wird die
Programmierung anhand der Sprache C erlernt und mit Beispielen und
Aufgaben vertieft. Der Sprachumfang von C wird vorgestellt und
kritisch betrachtet, um typische Fehler zu vermeiden. Vorkenntnisse
im Programmieren werden nicht vorausgesetzt.
The SISDEP 93 conference proceedings present outstanding research
and development results in the area of numerical process and device
simulation. The miniaturization of today's semiconductor devices,
the usage of new materials and advanced process steps in the
development of new semiconductor technologies suggests the design
of new computer programs. This trend towards more complex
structures and increasingly sophisticated processes demands
advanced simulators, such as fully three-dimensional tools for
almost arbitrarily complicated geometries. With the increasing need
for better models and improved understanding of physical effects,
these proceedings support the simulation community and the process-
and device engineers who need reliable numerical simulation tools
for characterization, prediction, and development. This book covers
the following topics: process simulation and equipment modeling,
device modeling and simulation of complex structures, device
simulation and parameter extraction for circuit models, integration
of process, device and circuit simulation, practical applications
of simulation, algorithms and software.
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