"Materials and Reliability Handbook for Semiconductor Optical and Electron Devices" provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature.

The" Handbook "addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The "Handbook" emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms."

This book provides a comprehensive summary of the status of emerging sensor technologies and provides a framework for future advances in the field. Chemical sensors have gained in importance in the past decade for applications that include homeland security, medical and environmental monitoring and also food safety. A desirable goal is the ability to simultaneously analyze a wide variety of environmental and biological gases and liquids in the field and to be able to selectively detect a target analyte with high specificity and sensitivity. The goal is to realize real-time, portable and inexpensive chemical and biological sensors and to use these as monitors for handheld gas, environmental pollutant, exhaled breath, saliva, urine, or blood, with wireless capability.In the medical area, frequent screening can catch the early development of diseases, reduce the suffering of patients due to late diagnoses, and lower the medical cost. For example, a 96% survival rate has been predicted in breast cancer patients if the frequency of screening is every three months. This frequency cannot be achieved with current methods of mammography due to high cost to the patient and invasiveness (radiation). In the area of detection of medical biomarkers, many different methods, including enzyme-linked immunsorbent assay (ELISA), particle-based flow cytometric assays, electrochemical measurements based on impedance and capacitance, electrical measurement of microcantilever resonant frequency change, and conductance measurement of semiconductor nanostructures, gas chromatography (GC), ion chromatography, high density peptide arrays, laser scanning quantitiative analysis, chemiluminescence, selected ion flow tube (SIFT), nanomechanical cantilevers, bead-based suspension microarrays, magnetic biosensors and mass spectrometry (MS) have been employed. Depending on the sample condition, these methods may show variable results in terms of sensitivity for some applications and may not meet the requirements for a handheld biosensor.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

Gallium Nitride Processing for Electronics, Sensors and Spintronics details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three of the worlda (TM)s leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential.

This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics.

Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps which give them a huge advantage over the indirect gap SiC. As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high-brightness (15 lumens per watt), very-long-lifetime white LEDs are under development with the potential to replace incandescent bulbs in many situations.

WIDE BANDGAP SEMICONDUCTORS provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical explanations of key processes such as laser diodes, LEDs and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques, and more...

The volume also explores the potential use of these semiconductors in HDTV, power conditioning devices, and high power microwave applications. The contributors are all experts in the fields of growth, processing, and characterization of these semiconductors, including II-VI compounds, processing techniques for SiC, GaN and diamond, and materials analysis of all wide gap semiconductors.

Key Features:

- Explains the development and advantages of broadgap semiconductors, showing their increasing power and their increasingly broader use in commercial and military products

- Features step-by-step explanations of key processes in the fabrication of the semiconductors, including chemistry, testing, design, and more

- Explores the need for advanced electronics capable of operation at 6000C and how silicon-on-insulator technology will meet this need

- Provides an understanding of semiconductor chemistry, thermodynamics and etching, along with technical explanations of common devices, descriptions of processing equipment and techniques, impurity testing, implantation damage, and more

This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encourage ment from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swamina than, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tul chinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the art work. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. l Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. l. 2 Hydrogen Implantation . . . . . . ."

Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including original theoretical and experimental work. It also explains how these investigations have translated into applications and products. Written by experts in the field, the chapters review cutting-edge progress on semiconductor and nanomaterial-based sensors. An excellent introduction to the subject, this book is also an outstanding reference for those working on different sensor applications. It addresses various subfields, including: GaN-based sensor arrays for quick and reliable medical testing Optical sensors Wireless remote hydrogen sensing systems MOS-based, thin-film, and nanowire-based sensors The wide-bandgap semiconductor sensors discussed in this book offer many advantages as replacements for silicon-based sensors, including their high chemical resistance, high-temperature operation, and blue and ultraviolet optoelectronic behaviors. Although assays exist for biomedical detection, they are limited by various factors. Nanomaterial devices, such as the sensors examined in this book, are currently the best option for moving toward fast, label-free, sensitive, and selective multiple-detection systems for biological and medical sensing applications. Providing sufficient background information and technical detail, this is an excellent resource for advanced level undergraduate and graduate students as well as researchers in gas, chemical, biological, and medical sensors.

Sales of U.S. chemical sensors represent the largest segment of the multi-billion-dollar global sensor market, which includes instruments for chemical detection in gases and liquids, biosensors, and medical sensors. Although silicon-based devices have dominated the field, they are limited by their general inability to operate in harsh environments faced with factors such as high temperature and pressure. Exploring how and why these instruments have become a major player, Semiconductor Device-Based Sensors for Gas, Chemical, and Biomedical Applications presents the latest research, including original theoretical and experimental work. It also explains how these investigations have translated into applications and products. Written by experts in the field, the chapters review cutting-edge progress on semiconductor and nanomaterial-based sensors. An excellent introduction to the subject, this book is also an outstanding reference for those working on different sensor applications. It addresses various subfields, including: GaN-based sensor arrays for quick and reliable medical testing Optical sensors Wireless remote hydrogen sensing systems MOS-based, thin-film, and nanowire-based sensors The wide-bandgap semiconductor sensors discussed in this book offer many advantages as replacements for silicon-based sensors, including their high chemical resistance, high-temperature operation, and blue and ultraviolet optoelectronic behaviors. Although assays exist for biomedical detection, they are limited by various factors. Nanomaterial devices, such as the sensors examined in this book, are currently the best option for moving toward fast, label-free, sensitive, and selective multiple-detection systems for biological and medical sensing applications. Providing sufficient background information and technical detail, this is an excellent resource for advanced level undergraduate and graduate students as well as researchers in gas, chemical, biological, and medical sensors.

With an in-depth exploration of the following topics, this book covers the broad uses of zinc oxide within the fields of materials science and engineering:
- Recent advances in bulk, thin film and nanowire growth of ZnO (including MBE, MOCVD and PLD),
- The characterization of the resulting material (including the related ternary systems ZgMgO and ZnCdO),
- Improvements in device processing modules (including ion implantation for doping and isolation, Ohmic and Schottky contacts, wet and dry etching),
- The role of impurities and defects on materials properties
- Applications of ZnO in UV light emitters/detectors, gas, biological and chemical-sensing, transparent electronics, spintronics and thin film

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability. Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms.

The first "GaN and Related Materials" covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics and Er-doping. This follow-up features contributions from leading experts that cover the full spectrum of growth, characterization, theory, modelling, processing, and devices.