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Polycrystalline Silicon for Integrated Circuits and Displays,
Second Edition presents much of the available knowledge about
polysilicon. It represents an effort to interrelate the deposition,
properties, and applications of polysilicon. By properly
understanding the properties of polycrystalline silicon and their
relation to the deposition conditions, polysilicon can be designed
to ensure optimum device and integrated-circuit performance.
Polycrystalline silicon has played an important role in
integrated-circuit technology for two decades. It was first used in
self-aligned, silicon-gate, MOS ICs to reduce capacitance and
improve circuit speed. In addition to this dominant use,
polysilicon is now also included in virtually all modern bipolar
ICs, where it improves the basic physics of device operation. The
compatibility of polycrystalline silicon with subsequent
high-temperature processing allows its efficient integration into
advanced IC processes. This compatibility also permits polysilicon
to be used early in the fabrication process for trench isolation
and dynamic random-access-memory (DRAM) storage capacitors. In
addition to its integrated-circuit applications, polysilicon is
becoming vital as the active layer in the channel of thin-film
transistors in place of amorphous silicon. When polysilicon
thin-film transistors are used in advanced active-matrix displays,
the peripheral circuitry can be integrated into the same substrate
as the pixel transistors. Recently, polysilicon has been used in
the emerging field of microelectromechanical systems (MEMS),
especially for microsensors and microactuators. In these devices,
the mechanical properties, especially the stress in the polysilicon
film, are critical to successful device fabrication.
Polycrystalline Silicon for Integrated Circuits and Displays,
Second Edition is an invaluable reference for professionals and
technicians working with polycrystalline silicon in the integrated
circuit and display industries.
Recent years have seen silicon integrated circuits enter into an
increasing number of technical and consumer applications, until
they now affect everyday life, as well as technical areas.
Polycrystalline silicon has been an important component of silicon
technology for nearly two decades, being used first in MOS
integrated circuits and now becoming pervasive in bipolar circuits,
as well. During this time a great deal of informa tion has been
published about polysilicon. A wide range of deposition conditions
has been used to form films exhibiting markedly different
properties. Seemingly contradictory results can often be explained
by considering the details of the structure formed. This monograph
is an attempt to synthesize much of the available knowledge about
polysilicon. It represents an effort to interrelate the deposition,
properties, and applications of polysilicon so that it can be used
most effectively to enhance device and integrated-circuit perfor
mance. As device performance improves, however, some of the proper
ties of polysilicon are beginning to restrict the overall
performance of integrated circuits, and the basic limitations of
the properties of polysili con also need to be better understood to
minimize potential degradation of circuit behavior."
Polycrystalline Silicon for Integrated Circuits and Displays,
Second Edition presents much of the available knowledge about
polysilicon. It represents an effort to interrelate the deposition,
properties, and applications of polysilicon. By properly
understanding the properties of polycrystalline silicon and their
relation to the deposition conditions, polysilicon can be designed
to ensure optimum device and integrated-circuit performance.
Polycrystalline silicon has played an important role in
integrated-circuit technology for two decades. It was first used in
self-aligned, silicon-gate, MOS ICs to reduce capacitance and
improve circuit speed. In addition to this dominant use,
polysilicon is now also included in virtually all modern bipolar
ICs, where it improves the basic physics of device operation. The
compatibility of polycrystalline silicon with subsequent
high-temperature processing allows its efficient integration into
advanced IC processes. This compatibility also permits polysilicon
to be used early in the fabrication process for trench isolation
and dynamic random-access-memory (DRAM) storage capacitors. In
addition to its integrated-circuit applications, polysilicon is
becoming vital as the active layer in the channel of thin-film
transistors in place of amorphous silicon. When polysilicon
thin-film transistors are used in advanced active-matrix displays,
the peripheral circuitry can be integrated into the same substrate
as the pixel transistors. Recently, polysilicon has been used in
the emerging field of microelectromechanical systems (MEMS),
especially for microsensors and microactuators. In these devices,
the mechanical properties, especially the stress in the polysilicon
film, are critical to successful device fabrication.
Polycrystalline Silicon for Integrated Circuits and Displays,
Second Edition is an invaluable reference for professionals and
technicians working with polycrystalline silicon in the integrated
circuit and display industries.
Recent years have seen silicon integrated circuits enter into an
increasing number of technical and consumer applications, until
they now affect everyday life, as well as technical areas.
Polycrystalline silicon has been an important component of silicon
technology for nearly two decades, being used first in MOS
integrated circuits and now becoming pervasive in bipolar circuits,
as well. During this time a great deal of informa tion has been
published about polysilicon. A wide range of deposition conditions
has been used to form films exhibiting markedly different
properties. Seemingly contradictory results can often be explained
by considering the details of the structure formed. This monograph
is an attempt to synthesize much of the available knowledge about
polysilicon. It represents an effort to interrelate the deposition,
properties, and applications of polysilicon so that it can be used
most effectively to enhance device and integrated-circuit perfor
mance. As device performance improves, however, some of the proper
ties of polysilicon are beginning to restrict the overall
performance of integrated circuits, and the basic limitations of
the properties of polysili con also need to be better understood to
minimize potential degradation of circuit behavior."
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