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This book provides analysis and discusses the design of various
MOSFET technologies which are used for the design of Double-Pole
Four-Throw (DP4T) RF switches for next generation communication
systems. The authors discuss the design of the (DP4T) RF switch by
using the Double-Gate (DG) MOSFET, as well as the Cylindrical
Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high
dielectric material) in the design of DG MOSFET and CSDG MOSFET is
also explored. Coverage includes comparison of Single-gate MOSFET
and Double-gate MOSFET switching parameters, as well as testing of
MOSFETs parameters using image acquisition.
This book provides analysis and discusses the design of various
MOSFET technologies which are used for the design of Double-Pole
Four-Throw (DP4T) RF switches for next generation communication
systems. The authors discuss the design of the (DP4T) RF switch by
using the Double-Gate (DG) MOSFET, as well as the Cylindrical
Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high
dielectric material) in the design of DG MOSFET and CSDG MOSFET is
also explored. Coverage includes comparison of Single-gate MOSFET
and Double-gate MOSFET switching parameters, as well as testing of
MOSFETs parameters using image acquisition.
The most commonly used tool for studying gate-oxide quality in
detail is the Capacitance-Voltage (iV) technique. iV test results
offer a wealth of device and process Information, including bulk
and interface charges and many MOS-device parameters.This Project
will devote for how to use the Agilent LCR meter (E-4980A) to make
iV measurements. It also addresses basic MOS physics, proper iV
measurement techniques, and parameter extraction from iV test
results. iV measurements are typically made on a capacitor- like
device, such as a MOS capacitor (MOS-e. Successful measurements
require compensating for stray capacitance, recording capacitance
values only at equilibrium conditions, and applying measuring
signals in an appropriate sequence. These issues are addressed in
my project under result chapter to provide guidance for choosing
and/or writing test routines and preparing for iV tests. This work
has Introduction (Chapter-1), VEE-Pro Software (Chapter-2), SUPREM
Simulation (Chapter-3), Fabrication of MOS(Oxidation) (Chapter-5),
Capacitances of MOS (Chapter-6), Record the data of iV curves
(Chapter-7) and Conclusion (Chapter-8).
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