This book introduces a promising design for future Internet, the Smart Collaborative Identifier NETwork (SINET). By examining cutting-edge research from around the world, it is the first book to provide a comprehensive survey of SINET, including its basic theories and principles, a broad range of architectures, protocols, standards, and future research directions. For further investigation, the book also provides readers an experimental analysis of SINET to promote further, independent research. The second part of the book presents in detail key technologies in SINET such as scalable routing, efficient mapping systems, mobility management and security issues. In turn, the last part presents various implementations of SINET, assessing its merits. The authors believe SINET will greatly benefit researchers involved in designing future Internet thanks to its high degree of flexibility, security, manageability, mobility support and efficient resource utilization.

This book introduces a promising design for future Internet, the Smart Collaborative Identifier NETwork (SINET). By examining cutting-edge research from around the world, it is the first book to provide a comprehensive survey of SINET, including its basic theories and principles, a broad range of architectures, protocols, standards, and future research directions. For further investigation, the book also provides readers an experimental analysis of SINET to promote further, independent research. The second part of the book presents in detail key technologies in SINET such as scalable routing, efficient mapping systems, mobility management and security issues. In turn, the last part presents various implementations of SINET, assessing its merits. The authors believe SINET will greatly benefit researchers involved in designing future Internet thanks to its high degree of flexibility, security, manageability, mobility support and efficient resource utilization.

Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.

Silicon-On-Insulator (SOI) CMOS technology has been regarded as another major technology for VLSI in addition to bulk CMOS technology. Owing to the buried oxide structure, SOI technology offers superior CMOS devices with higher speed, high density, and reduced second order effects for deep-submicron low-voltage, low-power VLSI circuits applications. In addition to VLSI applications, and because of its outstanding properties, SOI technology has been used to realize communication circuits, microwave devices, BICMOS devices, and even fiber optics applications. CMOS VLSI Engineering: Silicon-On-Insulator addresses three key factors in engineering SOI CMOS VLSI - processing technology, device modelling, and circuit designs are all covered with their mutual interactions. Starting from the SOI CMOS processing technology and the SOI CMOS digital and analog circuits, behaviors of the SOI CMOS devices are presented, followed by a CAD program, ST-SPICE, which incorporates models for deep-submicron fully-depleted mesa-isolated SOI CMOS devices and special purpose SOI devices including polysilicon TFTs. CMOS VLSI Engineering: Silicon-On-Insulator is written for undergraduate senior students and first-year graduate students interested in CMOS VLSI. It will also be suitable for electrical engineering professionals interested in microelectronics.

This book examines the impact of population growth and urbanization on the household registration system in China. Drawing on experiences from other countries in population management, it proposes a general framework for reforming the household registration system in China. This framework is based on the principle of "equity of rights and obligations" and includes a points system to guide implementation. The book also analyzes the economic implications of optimizing restrictions on urban household registration and the fiscal reforms associated with the reform. The practicality of the points system program is further verified.

This book builds an information platform on China's industrial competitiveness, providing scientific design and application case studies for integrated analysis and decision-making facilities and mechanisms for enterprises, industries, financial institutions and governments, which can make up for the lack of adequate information in China's market operations, especially the problems of duplicate construction and vicious competition aggravated by the lack of systematically processed industrial information. This book not only pursues innovation in technical methods and application theories but also pursues the collection, processing and collation of relevant domestic and international data and development and application so as to provide primary results for an industrial competitiveness database adapted to government management needs. The research is closely related to the actual problems in China and extensively uses statistical data to make various model analyses, which has a relatively sizeable academic value.

This study investigates the relationship between stock prices and dividends in Taiwan stock market during the June 1991 to February 2005 period. We employ linear, nonlinear and panel techniques which provide a much stronger test to examine the relationship between stock prices and dividends. Our results suggest that there is a long-run nonlinear relationship between stock prices and dividends. We found that present value model is more suitable with time-varying expected returns provides an empirically valid description of Taiwan stock price behavior in the long-run, while short-run deviations of actual stock prices from present value prices are driven by rational bubbles. Compared to conventional cointegration approach this technique produces more convincing evidence of the time series properties of the dividend and price, the momentum threshold autoregressive (MTAR) method is flexible enough to capture non-linear adjustment patterns and support the existence of stock price increases relative to fundamentals in Taiwan stock market.

Beijing Kid is the remembered stories of a girl, among the first of the one-child children, growing up in the Beijing that straddled both the old and new China. They are stories of rebellion and affection, cruelty and tenderness, pain and joy. Wei Su records the poignancy of family death and the conflict of being her parents' child, but no longer a child in the new Beijing. She experiences the drama of Tian'anmen Square, her family's first TV set, and the mysteries of peer betrayal as signposts along her journey to Chinese womanhood. These stories may have been lived by many, but they have rarely been recorded with such candor and insight.

The proceedings cover the latest research in advanced materials such as design, synthesis and development of new materials, processing technology for new materials, and modeling and simulation of materials processing.