In this book, the author theoretically studies two aspects of topological states. First, novel states arising from hybridizing surface states of topological insulators are theoretically introduced. As a remarkable example, the author shows the existence of gapless interface states at the interface between two different topological insulators, which belong to the same topological phase. While such interface states are usually gapped due to hybridization, the author proves that the interface states are in fact gapless when the two topological insulators have opposite chiralities. This is the first time that gapless topological novel interface states protected by mirror symmetry have been proposed. Second, the author studies the Weyl semimetal phase in thin topological insulators subjected to a magnetic field. This Weyl semimetal phase possesses edge states showing abnormal dispersion, which is not observed without mirror symmetry. The author explains that the edge states gain a finite velocity by a particular form of inversion symmetry breaking, which makes it possible to observe the phenomenon by means of electric conductivity.

Adaptive Structural Systems with Piezoelectric Transducer Circuitry provides a comprehensive discussion on the integration of piezoelectric transducers with electrical circuitry for the development and enhancement of adaptive structural systems.

Covering a wide range of interdisciplinary research, this monograph presents a paradigm of taking full advantage of the two-way electro-mechanical coupling characteristics of piezoelectric transducers for structural control and identification in adaptive structural systems. Presenting descriptions of algorithm development, theoretical analysis and experimental investigation, engineers and researchers alike will find this a valuable reference.

Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

The book contains a comprehensive review of the physics, modelling and simulation of electron transport at interfaces in semiconductor devices. Particular emphasis is put on the consistent derivation of interface or boundary conditions for semiconductor device simulation. It combines a review of existing interface charge transport models with original developments. A unified representation of charge transport at semiconductor interfaces is introduced. Models for the most important interfaces are derived, classified within the unique modelling framework, and discussed in the context of device simulation. Discretization methods for numerical solution techniques are presented.

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Intersubband transitions in quantum wells have attracted tremendous attention in recent years, mainly due to the promise of applications in the mid and far-infrared regions (2--20 mum). Many of the papers presented in Quantum Well Intersubband Transition Physics and Devices are on the basic linear intersubband transition processes, detector physics and detector application, reflecting the current state of understanding and detector applications, where highly uniform, large focal plane arrays have been demonstrated. Other areas are still in their early stages, including infrared modulation, harmonic generation and emission.

Knowledge of the refractive indices and absorption coefficients of semiconductors is especially import in the design and analysis of optical and optoelectronic devices. The determination of the optical constants of semiconductors at energies beyond the fundamental absorption edge is also known to be a powerful way of studying the electronic energy-band structures of the semiconductors. The purpose of this book is to give tabulated values and graphical information on the optical constants of the most popular semiconductors over the entire spectral range. This book presents data on the optical constants of crystalline and amorphous semiconductors. A complete set of the optical constants are presented in this book. They are: the complex dielectric constant (E=e.+ieJ, complex refractive index (n*=n+ik), absorption coefficient (a.), and normal-incidence reflectivity (R). The semiconductor materials considered in this book are the group-IV elemental and binary, llI-V, IT-VI, IV-VI binary semiconductors, and their alloys. The reader will fmd the companion book "Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles" useful since it emphasizes the basic material properties and fundamental prinCiples.

Second-Generation High-Temperature Superconducting Coils and Their Applications for Energy Storage addresses the practical electric power applications of high-temperature superconductors. It validates the concept of a prototype energy storage system using newly available 2G HTS conductors by investigating the process of building a complete system from the initial design to the final experiment. It begins with a clear introduction of the related background and then presents a comprehensive design of a superconducting energy storage system that can store maximum energy using a limited length of superconductors. The author has created a modeling environment for analysis of the system and also presents experimental results that are highly consistent with his theoretical calculations.

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

Nanostructured films and coatings possess unique properties due to both size and interface effects. They find many applications in areas such as electronics, catalysis, protection, data storage, optics and sensors. The focus of the present book is on synthesis and processing; advanced characterization techniques; properties (including mechanical, chemical, electronic, thermal, catalytic, and magnetic); modelling of interlayer and intralayer interfaces; and applications.

This book reviews the current status of semiconductor materials for conversion of sunlight to electricity, and highlights advances in both basic science and manufacturing. Photovoltaic (PV) solar electric technology will be a significant contributor to world energy supplies when reliable, efficient PV power products are manufactured in large volumes at low cost. Expert chapters cover the full range of semiconductor materials for solar-to-electricity conversion, from crystalline silicon and amorphous silicon to cadmium telluride, copper indium gallium sulfide selenides, dye sensitized solar cells, organic solar cells, and environmentally friendly copper zinc tin sulfide selenides. The latest methods for synthesis and characterization of solar cell materials are described, together with techniques for measuring solar cell efficiency. Semiconductor Materials for Solar Photovoltaic Cells presents the current state of the art as well as key details about future strategies to increase the efficiency and reduce costs, with particular focus on how to reduce the gap between laboratory scale efficiency and commercial module efficiency. This book will aid materials scientists and engineers in identifying research priorities to fulfill energy needs, and will also enable researchers to understand novel semiconductor materials that are emerging in the solar market. This integrated approach also gives science and engineering students a sense of the excitement and relevance of materials science in the development of novel semiconductor materials. * Provides a comprehensive introduction to solar PV cell materials * Reviews current and future status of solar cells with respect to cost and efficiency * Covers the full range of solar cell materials, from silicon and thin films to dye sensitized and organic solar cells * Offers an in-depth account of the semiconductor material strategies and directions for further research * Features detailed tables on the world leaders in efficiency demonstrations * Edited by scientists with experience in both research and industry

This book, edited by Potyrailo and Amis, addresses a new paradigm-shifting approach in the search for new materials-Combinatorial Materials Science. One way to consider such an approach is to imagine an adventurous chef who decides to look for new entrees by cooking food ingredients in many pots using different combinations in every pot, and boil ing, steaming, or frying them in various ways. Although most of the pots will not have the tastiest food ever devised, some recipes will taste intriguing, and some eventually will lead to a discovery of a new fascinating cuisine. Of course, having a skilled chef design the com binatorial formulation will certainly be helpful in ensuring a successful outcome. Similar to food, each engineering material is a complex product of its chemical composition, structure, and processing. Generally, each of these components matters---change one and you get another material. Most of these "new" materials will be less good than ones we use now since existing materials have been refined with the extensive work of scientists and engi neers. At the same time if one prepares diverse materials like our adventurous chef, chang ing material composition, processing conditions and time, etc., some of these materials will be superior to existing ones and a few might represent breakout technology."

This book presents an in-depth discussion of the semiconductor-laser gain medium. The optical and electronic properties of semiconductors, particularly semiconductor quantum-well systems, are analzyed in detail, covering a wide variety of near-infrared systems with or without strain, as well as wide-gap materials such as the group-III nitride compounds or the II-VI materials. The important bandstructure modifications and Coulomb interaction effects are discussed, including the solution of the longstanding semiconductor laser lineshape problem. Quantitative comparisons between measured and predicted gain/absorption and refractive index spectra for a wide variety of semiconductor-laser materials enable the theoretical results to be used directly in the engineering of advanced laser and amplifier structures. A wealth of examples for many different material combinations bestow the book with quantitative and predictive value for a wide variety of applications.

This monographdeals with metastable states in amorphoussemiconductors- ma- rials which lack long-range periodicity in the atoms' positions, which are in th- modynamic nonequilibrium and which, in addition, have several metastable states. Thesestates giverise tovariouspropertiesandeffects- namelya widerangeofp- toinduced changes and high photosensitivity and X-ray sensitivity - that are unique among solid-state semiconductors.Historically, amorphousselenium and seleni- based materials have played an important role in physics and technology, and they continue to do so. In these materials there exist inherent intermediate (metastable) states, structural and electronic in origin, which lead to interesting properties and effects different from those of their crystalline counterparts. In this volume, the metastable states and related effects are investigated in depth against the background of a detailed consideration of local atomic and electronic structure, and taking into account a wide range of light-induced effects. Although the rst publications on amorphous semiconductors date back to the early 1970s, studies of metastable states in these materials had not been analyzed systematically up to now, which led to erroneous ideas, even among specialists. In the present book, experimental investigations of metastable states are reported in detail for elemental selenium and selenium-based materials.

Scanning Probe Lithography (SPL) describes recent advances in the field of scanning probe lithography, a high resolution patterning technique that uses a sharp tip in close proximity to a sample to pattern nanometer-scale features on the sample. SPL is capable of patterning sub-30nm features with nanometer-scale alignment registration. It is a relatively simple, inexpensive, reliable method for patterning nanometer-scale features on various substrates. It has potential applications for nanometer-scale research, for maskless semiconductor lithography, and for photomask patterning. The authors of this book have been key players in this exciting new field. Calvin Quate has been involved since the beginning in the early 1980s and leads the research time that is regarded as the foremost group in this field. Hyongsok Tom Soh and Kathryn Wilder Guarini have been the members of this group who, in the last few years, have brought about remarkable series of advances in SPM lithography. Some of these advances have been in the control of the tip which has allowed the scanning speed to be increased from mum/second to mm/second. Both non-contact and in-contact writing have been demonstrated as has controlled writing of sub-100 nm lines over large steps on the substrate surface. The engineering of a custom-designed MOSFET built into each microcantilever for individual current control is another notable achievement. Micromachined arrays of probes each with individual control have been demonstrated. One of the most intriguing new aspects is the use of directly-grown carbon nanotubes as robust, high-resolution emitters. In this book the authors concisely and authoritatively describe the historical context, the relevant inventions, and the prospects for eventual manufacturing use of this exciting new technology.

Bringing Scanning Probe Microscopy Up to Speed introduces the principles of scanning probe systems with particular emphasis on techniques for increasing speed. The authors include useful information on the characteristics and limitations of current state-of-the-art machines as well as the properties of the systems that will follow in the future. The basic approach is two-fold. First, fast scanning systems for single probes are treated and, second, systems with multiple probes operating in parallel are presented. The key components of the SPM are the mechanical microcantilever with integrated tip and the systems used to measure its deflection. In essence, the entire apparatus is devoted to moving the tip over a surface with a well-controlled force. The mechanical response of the actuator that governs the force is of the utmost importance since it determines the scanning speed. The mechanical response relates directly to the size of the actuator; smaller is faster. Traditional scanning probe microscopes rely on piezoelectric tubes of centimeter size to move the probe. In future scanning probe systems, the large actuators will be replaced with cantilevers where the actuators are integrated on the beam. These will be combined in arrays of multiple cantilevers with MEMS as the key technology for the fabrication process.

This book proposes a thorough introduction for a varied audience. The reader will master London theory and the Pippard equations, and go on to understand type I and type II superconductors (their thermodynamics, magnetic properties, vortex dynamics, current transport...), Cooper pairs and the results of BCS theory. By studying coherence and flux quantization he or she will be lead to the Josephson effect which, with the SQUID, is a good example of the applications. The reader can make up for any gaps in his knowledge with the use of the appendices, follow the logic behind each model, and assimilate completely the underlying concepts. Approximately 250 illustrations help in developing a thorough understanding. This volume is aimed towards masters and doctoral students, as well as advanced undergraduates, teachers and researchers at all levels coming from a broad range of subjects (chemistry, physics, mechanical and electrical engineering, materials science...). Engineers working in industry will have a useful introduction to other more applied or specialized material. Philippe Mangin is emeritus professor of physics at Mines Nancy Graduate School of Science, Engineering and Management of the University of Lorraine, and researcher at the Jean Lamour Institute in France. He is the former director of both the French neutron scattering facility, Leon Brillouin Laboratory in Orsay, and the Material Physics Laboratory in Nancy, and has taught superconductivity to a broad audience, in particular to engineering students. Remi Kahn is a retired senior research scientist of the French Alternative Energies and Atomic Energy Commission (CEA-Saclay). He worked at the Leon Brillouin Laboratory and was in charge of the experimental areas of INB 101 (the Orphee research reactor). This work responded to the need to bring an accessible account suitable for a wide spectrum of scientists and engineers.

SISDEP a (TM)95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.

This book focuses on the thermophysical properties of Ge-Sb-Te alloys, which are the most widely used phase change materials, and the technique for measuring them. Describing the measuring procedure and parameter calibration in detail, it provides readers with an accurate method for determining the thermophysical properties of phase change materials and other related materials. Further, it discusses combining thermal and electrical conductivity data to analyze the conduction mechanism, allowing readers to gain an understanding of phase change materials and PCM industry simulation.

Kalia and Fu's novel monograph covers cryogenic treatment, properties and applications of cryo-treated polymer materials. Written by numerous international experts, the twelve chapters in this book offer the reader a comprehensive picture of the latest findings and developments, as well as an outlook on the field. Cryogenic technology has seen remarkable progress in the past few years and especially cryogenic properties of polymers are attracting attention through new breakthroughs in space, superconducting, magnetic and electronic techniques. This book is a valuable resource for researchers, educators, engineers and graduate students in the field and at technical institutions.

Plasma Processing of Semiconductors contains 28 contributions from 18 experts and covers plasma etching, plasma deposition, plasma-surface interactions, numerical modelling, plasma diagnostics, less conventional processing applications of plasmas, and industrial applications. Audience: Coverage ranges from introductory to state of the art, thus the book is suitable for graduate-level students seeking an introduction to the field as well as established workers wishing to broaden or update their knowledge.

Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles presents an introduction to the fundamental optical properties of semiconductors. This book presents tutorial articles in the categories of materials and fundamental principles (Chapter 1), optical properties in the reststrahlen region (Chapter 2), those in the interband transition region (Chapters 3 and 4) and at or below the fundamental absorption edge (Chapter 5). Optical Properties of Crystalline and Amorphous Semiconductors: Materials and Fundamental Principles is presented in a form which could serve to teach the underlying concepts of semiconductor optical properties and their implementation. This book is an invaluable resource for device engineers, solid-state physicists, material scientists and students specializing in the fields of semiconductor physics and device engineering.

The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.

A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.

This book reviews progress towards quantum simulators based on photonic and hybrid light-matter systems, covering theoretical proposals and recent experimental work. Quantum simulators are specially designed quantum computers. Their main aim is to simulate and understand complex and inaccessible quantum many-body phenomena found or predicted in condensed matter physics, materials science and exotic quantum field theories. Applications will include the engineering of smart materials, robust optical or electronic circuits, deciphering quantum chemistry and even the design of drugs. Technological developments in the fields of interfacing light and matter, especially in many-body quantum optics, have motivated recent proposals for quantum simulators based on strongly correlated photons and polaritons generated in hybrid light-matter systems. The latter have complementary strengths to cold atom and ion based simulators and they can probe for example out of equilibrium phenomena in a natural driven-dissipative setting. This book covers some of the most important works in this area reviewing the proposal for Mott transitions and Luttinger liquid physics with light, to simulating interacting relativistic theories, topological insulators and gauge field physics. The stage of the field now is at a point where on top of the numerous theory proposals; experiments are also reported. Connecting to the theory proposals presented in the chapters, the main experimental quantum technology platforms developed from groups worldwide to realize photonic and polaritonic simulators in the laboratory are also discussed. These include coupled microwave resonator arrays in superconducting circuits, semiconductor based polariton systems, and integrated quantum photonic chips. This is the first book dedicated to photonic approaches to quantum simulation, reviewing the fundamentals for the researcher new to the field, and providing a complete reference for the graduate student starting or already undergoing PhD studies in this area.