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Introduction to Magnetic Random-Access Memory (Hardcover)
Loot Price: R3,104
Discovery Miles 31 040
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Introduction to Magnetic Random-Access Memory (Hardcover)
Expected to ship within 12 - 17 working days
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Magnetic random-access memory (MRAM) is poised to replace
traditional computer memory based on complementary metal-oxide
semiconductors (CMOS). MRAM will surpass all other types of memory
devices in terms of nonvolatility, low energy dissipation, fast
switching speed, radiation hardness, and durability. Although
toggle-MRAM is currently a commercial product, it is clear that
future developments in MRAM will be based on spin-transfer torque,
which makes use of electrons spin angular momentum instead of their
charge. MRAM will require an amalgamation of magnetics and
microelectronics technologies. However, researchers and developers
in magnetics and in microelectronics attend different technical
conferences, publish in different journals, use different tools,
and have different backgrounds in condensed-matter physics,
electrical engineering, and materials science. This book is an
introduction to MRAM for microelectronics engineers written by
specialists in magnetic materials and devices. It presents the
basic phenomena involved in MRAM, the materials and film stacks
being used, the basic principles of the various types of MRAM
(toggle and spin-transfer torque; magnetized in-plane or
perpendicular-to-plane), the back-end magnetic technology, and
recent developments toward logic-in-memory architectures. It helps
bridge the cultural gap between the microelectronics and magnetics
communities.
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