Today s semiconductor memory market is divided between two types
of memory: DRAM and Flash. Each has its own advantages and
disadvantages. While DRAM is fast but volatile, Flash is
non-volatile but slow. A memory system based on self-organized
quantum dots (QDs) as storage node could combine the advantages of
modern DRAM and Flash, thus merging the latter s non-volatility
with very fast write times.
This thesis investigates the electronic properties of and
carrier dynamics in self-organized quantum dots by means of
time-resolved capacitance spectroscopy and time-resolved current
measurements. The first aim is to study the localization energy of
various QD systems in order to assess the potential of increasing
the storage time in QDs to non-volatility. Surprisingly, it is
found that the major impact of carrier capture cross-sections of
QDs is to influence, and at times counterbalance, carrier storage
in addition to the localization energy. The second aim is to study
the coupling between a layer of self-organized QDs and a
two-dimensional hole gas (2DHG), which is relevant for the read-out
process in memory systems. The investigation yields the discovery
of the many-particle ground states in the QD ensemble.In addition
to its technological relevance, the thesis also offers new insights
into the fascinating field of nanostructure physics."
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