During the last 30 years, significant progress has been made to
improve our understanding of gallium nitride and silicon carbide
device structures, resulting in experimental demonstration of their
enhanced performances for power electronic systems. Gallium nitride
power devices made by the growth of the material on silicon
substrates have gained a lot of interest. Power device products
made from these materials have become available during the last
five years from many companies.This comprehensive book discusses
the physics of operation and design of gallium nitride and silicon
carbide power devices. It can be used as a reference by practicing
engineers in the power electronics industry and as a textbook for a
power device or power electronics course in universities.
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