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Zinc Oxide - From Fundamental Properties Towards Novel Applications (Hardcover, 2010 ed.)
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Zinc Oxide - From Fundamental Properties Towards Novel Applications (Hardcover, 2010 ed.)
Series: Springer Series in Materials Science, 120
Expected to ship within 12 - 17 working days
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After the invention of semiconductor-based recti?ers and diodes in
the ?rst half of the last century, the advent of the transistor
paved the way for semiconductors in electronic data handling
starting around the mid of the last century. The transistors widely
replaced the vacuum tubes, which had even been used in the ?rst
generation of computers, the Z3 developed by Konrad Zuse in the
1940s of the last century. The ?rst transistors were individually
housed semiconductor devices, which had to be soldered into the
electric circuits. Later on, integrated circuits were developed
with increasing numbers of individual elements per square inch. The
materials changed from, e. g. , PbS and Se in rf-detectors and
recti?ers used frequentlyin the ?rst halfof the last centuryoverthe
groupIV element semicond- tor Ge with a band gap of 0. 7eV at room
temperature to Si with a value of 1. 1eV. The increase of the gap
reduced the leakage current and its temperature dependence
signi?cantly. Therefore, the logical step was to try GaAs with a
band gap of 1. 4eV next. However, the technology of this
semiconductor from the group of III-V c- poundsprovedto be
muchmoredif?cult,thoughbeautifuldeviceconceptshadbeen developed.
Therefore,GaAsanditsalloysandnanostructureswithotherIII-Vc-
poundslike AlGaAs or InP remained restricted in electronicsto
special applications like transistors for extremely high
frequencies, the so-called high electron mobility transistors
(HEMT). The IT industry is still mainly based on Si and will remain
so in the foreseeable nearer future.
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