Nanowire Field Effect Transistors: Principles and Applications (Paperback, Softcover reprint of the original 1st ed. 2014)

"Nanowire Field Effect Transistor: Basic Principles and Applications" places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

General

Imprint:	Springer-Verlag New York
Country of origin:	United States
Release date:	August 2016
First published:	2014
Editors:	Dae Mann Kim • Yoon-Ha Jeong
Dimensions:	235 x 155 x 16mm (L x W x T)
Format:	Paperback
Pages:	290
Edition:	Softcover reprint of the original 1st ed. 2014
ISBN-13:	978-1-4939-4572-6
Categories:	Books > Professional & Technical > Technology: general issues > Nanotechnology Books > Professional & Technical > Electronics & communications engineering > Electronics engineering > Electronic devices & materials > General Promotions
LSN:	1-4939-4572-6
Barcode:	9781493945726

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