Quantum size effects are becoming increasingly important in
microelectronics, as the dimensions of the structures shrink
laterally towards 100 nm and vertically towards 10 nm. Advanced
device concepts will exploit these effects for integrated circuits
with novel or improved properties. Keeping in mind the trend
towards systems on chip, this book deals with silicon-based quantum
devices and focuses on room-temperature operation. The basic
physical principles, materials, technological aspects, and
fundamental device operation are discussed in an interdisciplinary
manner. It is shown that silicon-germanium (SiGe) heterostructure
devices will play a key role in realizing silicon-based quantum
electronics.
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